Abstract
We present a compact physics-based model for the nanoscale gate-all-around (GAA) MOSFET working in the ballistic limit. The current through the device is obtained by means of the Landauer approach, the barrier height being the key parameter in the model. The exact solution of the Poisson's equation is obtained in order to deal with all the operation regions tracing properly the transitions between them.
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References
J.-T. Park and J.-P. Colinge, Multiple-gate SOI MOSFETs: device design guidelines, IEEE Trans. Electron Dev. 49(12), 2222–2229 (2002).
H.-S. P. Wong, Beyond the conventional transistor, IBM Journal of Research and Development 46(2/3), 133–168 (2002).
K. Natori, Ballistic metal-oxide-semiconductor field effect transistor, J. Appl. Phys. 76(8), 4879–4890 (1994).
D. Jiménez, J. J. Sáenz, B. Iñíguez, J. Suñé, L. F. Marsal, and J. Pallarès, Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect transistor, J. Appl. Phys. 94(2), 1061–1068 (2003).
D. Jiménez, J. J. Sáenz, B. Iñíguez, J. Suñé, L. F. Marsal, and J. Pallarès, Compact modeling of nanoscale MOSFETs in the ballistic limit, in Proc. ESSDERC Conf. 2003, 187–190.
D. Jiménez, J. J. Sáenz, B. Iñíguez, J. Suñé, L. F. Marsal, and J. Pallarès, Modeling of nanoscale gate-all-around MOSFETs, IEEE Electron Dev. Lett. 25(5), 314–316 (2004).
Y. Chen and J. Luo, A comparative study of double-gate and surrounding-gate MOSFETs in strong inversion and accumulation using an analytical model, in Technical Proceedings of the International Conference on Modeling and Simulation of Microsystems 2001, 546–549.
P. L. Chambré, On the solution of the Poisson-Boltzmann equation with application to the theory of thermal explosions, J. Chem. Phys. 20(11), 1795–1797 (1952).
J. H. Davies, The Physics of Low-Dimensional Semiconductors (Cambridge University Press: Cambrigde UK, 1998).
M. Je, S. Han, I. Kim, and H. Shin, A silicon quantum wire transistor with one-dimensional subband effects, Solid-State Electronics 44, 2207–2212 (2000).
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© 2005 Kluwer Academic Publishers
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Jiménez, D., Iñíguez, B., Sáenz, J.J., Suñé, J., Marsal, L.F., Pallarès, J. (2005). Compact Model of the Nanoscale Gate-All-Around MOSFET. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_37
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DOI: https://doi.org/10.1007/1-4020-3013-4_37
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-3011-6
Online ISBN: 978-1-4020-3013-0
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