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Planar Photomagnetic Effect SOI Sensors for Various Applications with Low Detection Limit

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Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment

Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 185))

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Abstract

Properties of the Planar PhotoMagnetic Effect (PPME) make it promising for the design of sensors with high sensitivity and low detection limit for various applications. We demonstrate the potential for application to magnetic field and chemical sensors. Theory is developed to show that PPME-based magnetic sensors can detect magnetic fields lower than current galvanomagnetic sensors, and the measured fields can approach values comparable to sensors using proton resonance and superconductivity. The applicability of PPME for chemical sensing is also demonstrated. The SOI technology is of especial interest for these sensors. However other semiconductor thin film technologies providing high bipolar photoconductivity and high electron and hole mobilities can also be used for the PPME sensor fabrication.

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Author information

Authors and Affiliations

  1. Department of Radiophysics, Kiev University, 2 Glushkov Av., Bldg. 5, 03127, Kiev, Ukraine

    V. N. Dobrovolsky

  2. Department of Electrical and Computer Engineering, Concordia University, 1455 de Maisonneuve Blvd, W., Montreal, Quebec, H3G 1M8, Canada

    V.K. Rossokhaty

Authors
  1. V. N. Dobrovolsky
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  2. V.K. Rossokhaty
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Université Catholique de Louvain, Louvain-la-Neuve, Belgium

    Denis Flandre

  2. Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kyiv, Ukraine

    Alexei N. Nazarov

  3. School of Electronics and Physical Sciences, University of Surrey, Guildford, UK

    Peter L.F. Hemment

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© 2005 Kluwer Academic Publishers

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Dobrovolsky, V.N., Rossokhaty, V. (2005). Planar Photomagnetic Effect SOI Sensors for Various Applications with Low Detection Limit. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_35

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  • DOI: https://doi.org/10.1007/1-4020-3013-4_35

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-3011-6

  • Online ISBN: 978-1-4020-3013-0

  • eBook Packages: EngineeringEngineering (R0)

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