Abstract
Moderately and heavily boron doped polysilicon-on-insulator layers before and after laser recrystallization were studied at cryogenic temperatures in high magnetic fields up to 14 T. Piezoresistance and magnetoresistance of poly-Si layers with different carrier concentration were investigated. It was shown that laser-recrystallized poly-Si layers could be used to develop piezoresistive sensors, operating at cryogenic temperatures and high magnetic fields.
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References
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Druzhinin, A., Maryamova, I., Kogut, I., Pankov, Y., Khoverko, Y., Palewski, T. (2005). Polysilicon-on-Insulator Layers at Cryogenic Temperatures and High Magnetic Fields. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_34
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DOI: https://doi.org/10.1007/1-4020-3013-4_34
Publisher Name: Springer, Dordrecht
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