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Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment pp 291–296Cite as

Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation

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Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 185))

Abstract

Development of a novel monolithic active pixel image sensor based on SOI technology is presented. Active pixel test matrices have been recently manufactured and are under extensive examination. This paper describes the concept of the device and shows the most recent results.

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References

  1. L. Badano et al., "SLIM (Secondary Emission for Low Interception Monitoring) — An Innovative Non-destructive Beam Monitor for the Extraction Lines of a Hadrontherapy Centre", Proc. 6th European Workshop on Beam Diag. and Instr. for Particle Accelerators, DIPAC 2003, pp 77–79, Mainz (2003).

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  3. M. Amati et al., "Hybrid Active Pixel Sensors and SOI Inspired Option", Nucl. Instr. and Meth. A 511/1–2, pp. 265–270, (2003)

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  4. J. Marczewski et al., "SOI Active Pixel Detectors of Ionizing Radiation — Technology & Design Development", IEEE Conf.-Nucl. Sc. Symp. 2003, Portland, USA, 19–25.10.2003

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  5. D. Tomaszewski et al., "A versatile tool for MOSFETs parameters extraction", 6th Symposium D&Y, Warsaw, June 22–25, 2003

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Author information

Authors and Affiliations

  1. Institute of Electron Technology, Al.Lotnikow 32/46, 02-668, Warszawa, Poland

    D. Tomaszewski, K. Domański, P. Grabiec, M. Grodner, B. Jaroszewicz, A. Kociubiński, K. Kucharski & J. Marczewski

  2. AGH-University of Science and Technology, Al.Mickiewicza 30, 30-059, Krakow, Poland

    T. Klatka, M. Kozieł, W. Kucewicz, S. Kuta, H. Niemiec, M. Sapor & M. Szeleźniak

Authors
  1. D. Tomaszewski
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  2. K. Domański
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  3. P. Grabiec
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  4. M. Grodner
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  5. B. Jaroszewicz
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  6. T. Klatka
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  7. A. Kociubiński
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  8. M. Kozieł
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  9. W. Kucewicz
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  10. K. Kucharski
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  11. S. Kuta
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  12. J. Marczewski
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  13. H. Niemiec
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  14. M. Sapor
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  15. M. Szeleźniak
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Université Catholique de Louvain, Louvain-la-Neuve, Belgium

    Denis Flandre

  2. Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kyiv, Ukraine

    Alexei N. Nazarov

  3. School of Electronics and Physical Sciences, University of Surrey, Guildford, UK

    Peter L.F. Hemment

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© 2005 Kluwer Academic Publishers

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Cite this paper

Tomaszewski, D. et al. (2005). Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_33

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  • DOI: https://doi.org/10.1007/1-4020-3013-4_33

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-3011-6

  • Online ISBN: 978-1-4020-3013-0

  • eBook Packages: EngineeringEngineering (R0)

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