Abstract
The increasing demand for high temperature circuits for applications in automotive, aerospace and oil/geothermal drilling industries over the last few years has created a demand for high temperature memory circuits. Silicon-on- insulator technologies, though well suited for the design of high temperature applications, prove to be problematic for the design of EEPROM circuits. SOI specific leakage currents lead to data loss at high temperatures. To successfully design high temperature EEPROM, new memory cell structures have to be developed.
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Richter, S.G.M., Kirsten, D., Nuernbergk, D.M., Richter, S.B. (2005). A Novel Low Leakage EEPROM Cell for Application in an Extended Temperature Range (−40°C Up to 225°C). In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_32
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DOI: https://doi.org/10.1007/1-4020-3013-4_32
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