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Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs

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Book cover Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment

Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 185))

Abstract

The back-gate induced noise overshoot revealed in partially-depleted SOI nMOSFETs and pMOSFETs is described. It is shown that the Lorentzian noise is responsible for that overshoot. The parameters of such Lorentzians are measured for different back-gate and front-gate voltages including the case where the Electron-Valence-Band (EVB) tunneling occurs. A model is proposed that attributes the back-gate induced Lorentzian to the Nyquist noise of the body-source conductance. It is assumed that the accumulating back-gate voltage induces the p++-nāˆ’āˆ’ junction near the back interface and its leakage current increases that conductance.

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References

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Author information

Authors and Affiliations

  1. Institute of Semiconductor Physics, Prospect Nauki 41, 03028, Kiev, Ukraine

    N. Lukyanchikova,Ā N. GarbarĀ &Ā A. Smolanka

  2. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    E. SimoenĀ &Ā C. Claeys

  3. E.E. Dept., KU Leuven, Belgium

    C. Claeys

Authors
  1. N. Lukyanchikova
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  2. N. Garbar
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  3. A. Smolanka
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  4. E. Simoen
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  5. C. Claeys
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, UniversitƩ Catholique de Louvain, Louvain-la-Neuve, Belgium

    Denis Flandre

  2. Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kyiv, Ukraine

    Alexei N. Nazarov

  3. School of Electronics and Physical Sciences, University of Surrey, Guildford, UK

    Peter L.F. Hemment

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Ā© 2005 Kluwer Academic Publishers

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Lukyanchikova, N., Garbar, N., Smolanka, A., Simoen, E., Claeys, C. (2005). Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_28

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  • DOI: https://doi.org/10.1007/1-4020-3013-4_28

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-3011-6

  • Online ISBN: 978-1-4020-3013-0

  • eBook Packages: EngineeringEngineering (R0)

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