Abstract
This paper presents a revision of the reverse gated-diode technique for application to thin-film SOI devices. Based on modeling of gate-controlled volume and surface generation components, a reliable approach for extracting generation parameters in thin-film SOI devices from reverse gated-diode measurements is developed and validated for high temperatures. The proposed approach is used for characterizing generation processes and evaluating generation parameters in UNIBOND SOI devices operating at high temperatures (in the temperature range 100 – 300° C).
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© 2005 Kluwer Academic Publishers
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Rudenko, T.E., Kilchytska, V.I., Flandre, D. (2005). Characterization of Carrier Generation in Thin-Film SOI Devices by Reverse Gated-Diode Technique and its Application at High Temperatures. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_27
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DOI: https://doi.org/10.1007/1-4020-3013-4_27
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-3011-6
Online ISBN: 978-1-4020-3013-0
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