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Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment pp 233–239Cite as

Radiation Effect on Electrical Properties of Fully-Depleted Unibond SOI MOSFETs

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Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 185))

Abstract

A radiation effect on edgeless FD accumulation mode (AM) p-channel and inversion mode (IM) n-channel MOSFETs, fabricated on UNIBOND SOI wafers, is investigated. The method of second derivative is used to determine the threshold voltages of front and back channels in the MOSFETs from the measurements of front-gate transistors only. Stronger irradiation effect on IM n-MOSFET than that on AM p-MOSFET is revealed. It has been showed, that radiation-induced positive charge in the BOX inverted back interface causes back channel creation in IM n-MOSFET but no such effect in AM p-MOSFET has been observed. It is demonstrated that small-doses have the effect of improving the quality of both interface.

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References

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Author information

Authors and Affiliations

  1. Institute of Semiconductor Physics, National Academy of Science of Ukraine, Prospekt Nauky 45, 03028, Kyiv, Ukraine

    Y. Houk, A. N. Nazarov, V. I. Turchanikov & V. S. Lysenko

  2. DICE, Universite Catholique de Louvain, Louvain-la-Neuve, Belgium

    S. Adriaensen & D. Flandre

Authors
  1. Y. Houk
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  2. A. N. Nazarov
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  3. V. I. Turchanikov
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  4. V. S. Lysenko
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  5. S. Adriaensen
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  6. D. Flandre
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Université Catholique de Louvain, Louvain-la-Neuve, Belgium

    Denis Flandre

  2. Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kyiv, Ukraine

    Alexei N. Nazarov

  3. School of Electronics and Physical Sciences, University of Surrey, Guildford, UK

    Peter L.F. Hemment

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© 2005 Kluwer Academic Publishers

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Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Adriaensen, S., Flandre, D. (2005). Radiation Effect on Electrical Properties of Fully-Depleted Unibond SOI MOSFETs. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_25

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  • DOI: https://doi.org/10.1007/1-4020-3013-4_25

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-3011-6

  • Online ISBN: 978-1-4020-3013-0

  • eBook Packages: EngineeringEngineering (R0)

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