Abstract
The effect of gamma-irradiation on the electrical characteristics of MOSFETs fabricated in DeleCut SOI wafers was defined. Properties of gate-oxide and BOX (buildup of radiation-induced charge in the oxide, interface state density and the initial concentration of traps in the oxide) were determined for DeleCut SOI MOSFETs and compared with that for thermal oxide on bulk silicon, Unibond and SIMOX wafers.
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Naumova, O., Frantzusov, A., Antonova, I., Popov, V.P. (2005). Total Dose Behavior of Partially Depleted Delecut SOI MOSFETs. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_24
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DOI: https://doi.org/10.1007/1-4020-3013-4_24
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