Abstract
The following radiation effects are considered in silicon- on- insulator structures irradiated with either 2.0 MeV electrons or 245 MeV multi charged Kr ions in the dose range of 105 – 106 rad: (1) accumulation of the positive charge in the buried oxide, (2) generation / transformation of traps at the Si/SiO2 interfaces, (3) introduction of electrically active radiation defects in the top silicon layer and the substrate.
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Antonova, I., Stano, J., Naumova, O., Skuratov, V., Popov, V. (2005). Radiation Effects in SOI: Irradiation by High Energy Ions and Electrons. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_22
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DOI: https://doi.org/10.1007/1-4020-3013-4_22
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-3011-6
Online ISBN: 978-1-4020-3013-0
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