Abstract
There are many advantages of using ultrathin fully depleted silicon on insulator (SOI) wafers in advanced integrated circuit technologies. This includes high-speed and low power circuit operation as well as reduced sensitivity to radiation effects that results from ideal isolation. These properties will make them especially useful for ULSI applications as the device dimensions are scaled to nanometer range. Perspective design of SOI MOSFET with improved characteristics and reliability in wide temperature range (4–600 K) could be realized in nanoscale.
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Uritsky, V.Y. (2005). Novel SOI MOSFET Structure for Operation over a Wide Range of Temperatures. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_18
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DOI: https://doi.org/10.1007/1-4020-3013-4_18
Publisher Name: Springer, Dordrecht
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