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Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs

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Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment

Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 185))

Abstract

This paper surveys the hydrogen behavior (trapping, diffusion and generation) in gate and buried oxides in Metal-Oxide-Silicon (MOS) and Silicon-On-Insulator (SOI) structures and MOSFETs. New phenomena relating to proton generation in buried oxide (BOX) of SOI structures and MOSFETs during high-temperature hydrogen annealing and bias-temperature (BT) stress are considered. Analysis of the high-temperature charge instability, which is created at BT stress in the BOX is performed. The model of proton defect-assisted generation in the BOX due to temperature and negative bias stress is presented.

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Author information

Authors and Affiliations

  1. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 41, 03028, Kiev-28, Ukraine

    A.N. Nazarov

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  1. A.N. Nazarov
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Editors and Affiliations

  1. Microelectronics Laboratory, Université Catholique de Louvain, Louvain-la-Neuve, Belgium

    Denis Flandre

  2. Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kyiv, Ukraine

    Alexei N. Nazarov

  3. School of Electronics and Physical Sciences, University of Surrey, Guildford, UK

    Peter L.F. Hemment

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© 2005 Kluwer Academic Publishers

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Nazarov, A. (2005). Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_13

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  • DOI: https://doi.org/10.1007/1-4020-3013-4_13

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-3011-6

  • Online ISBN: 978-1-4020-3013-0

  • eBook Packages: EngineeringEngineering (R0)

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