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Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment pp 109–120Cite as

Reliability and Electrical Fluctuations in Advanced SOI CMOS Devices

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Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 185))

Abstract

With SOI to be adapted as a mainstream technology in the forthcoming years, two issues are still of a critical interest regarding circuit applications: low frequency noise behavior and hot-carrier reliability, in state-of-the art SOI MOSFETs. Both are thoroughly investigated in this paper and a set of recent results in advanced CMOS SOI devices is given.

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Author information

Authors and Affiliations

  1. IMEP, ENSERG, 23 rue des Martyrs, BP 257, 38016, Grenoble Cedex 1, France

    Jalal Jomaah & Francis Balestra

Authors
  1. Jalal Jomaah
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  2. Francis Balestra
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Université Catholique de Louvain, Louvain-la-Neuve, Belgium

    Denis Flandre

  2. Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kyiv, Ukraine

    Alexei N. Nazarov

  3. School of Electronics and Physical Sciences, University of Surrey, Guildford, UK

    Peter L.F. Hemment

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© 2005 Kluwer Academic Publishers

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Jomaah, J., Balestra, F. (2005). Reliability and Electrical Fluctuations in Advanced SOI CMOS Devices. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_12

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  • DOI: https://doi.org/10.1007/1-4020-3013-4_12

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-3011-6

  • Online ISBN: 978-1-4020-3013-0

  • eBook Packages: EngineeringEngineering (R0)

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