Abstract
For stimulation of ultra-thin dielectric layer formation we used in-situ ultrasound (US) excitation of the silicon wafer during N+ or O+ ion implantation. ToF-SIMS dopant profiling and infrared transmission spectroscopy has been used to analyze the buried film structure and composition.. The US treatment during an implantation gives in more effective SiO2 phase growth in the area of Rp-ΔRp. The thickness of the buried layer is ∼5 nm less in comparison with the case of implantation without US. For the samples implanted by nitrogen, ultrasonic treatment leads to shrinkage of nitrogen distribution profile and its shift to a surface.
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Martinyuk, O. et al. (2005). SiO2 and Si3N4 Phase Formation by Ion Implantation with In-Situ Ultrasound Treatment. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_10
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DOI: https://doi.org/10.1007/1-4020-3013-4_10
Publisher Name: Springer, Dordrecht
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