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Photo-Excited Processes, Diagnostics and Applications pp 225–250Cite as

Thin Nitride Films Deposited by Reactive Pulsed Laser Ablation

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Abstract

This chapter reviews the work done in our laboratory and others on synthesis and deposition of thin films of metal nitrides, using the reactive pulsed laser ablation (RPLD) technique. In particular, thin films deposition of transition-metal nitride e.g. TiN and VN, aluminum AlN and boron nitride BN films are detailed. The characteristics of the fabricated films are presented as a function of the deposition parameters, to explain their role and give useful information for the development and application of this innovative deposition technique.

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  1. Dipartimento di Fisica and Istituto Nazionale per la Fisica della Materia, Università di Lecce, 73100, Lecce, Italy

    Armando Luches & Anna Paola Caricato

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  1. Armando Luches
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  1. Holon Academic Institute of Technology, Israel

    A. Peled

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Luches, A., Caricato, A.P. (2003). Thin Nitride Films Deposited by Reactive Pulsed Laser Ablation. In: Peled, A. (eds) Photo-Excited Processes, Diagnostics and Applications. Springer, Boston, MA. https://doi.org/10.1007/1-4020-2610-2_8

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