Abstract
A detailed study of low frequency noise drain-gate correlation in the presence of significant gate leakage current will be presented for ultrathin oxide MOSFETs. Measurements and a physical model for the correlation coefficient will be discussed. The correlation coefficient between the drain and the gate is derived on the basis of partition noise theory and the BSIM4 gate leakage current model with source-drain partition, and is in good agreement with correlation noise measurements as a function of the gate to the drain current ratio.
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Lee, J., Bosman, G. (2004). Correlation Noise Measurements and Modeling of Nanoscale MOSFETs. In: Sikula, J., Levinshtein, M. (eds) Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices. NATO Science Series II: Mathematics, Physics and Chemistry, vol 151. Springer, Dordrecht. https://doi.org/10.1007/1-4020-2170-4_18
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DOI: https://doi.org/10.1007/1-4020-2170-4_18
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-2169-5
Online ISBN: 978-1-4020-2170-1
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