Abstract
In this chapter the carrier transport phenomena in a semiconductor under the in- fluence of applied external fields are presented. Different galvanomagnetic, thermoelectric, and thermomagnetic effects created by the applied electric and magnetic fields as well as the temperature gradient in a semiconductor are discussed in this chapter. The transport coefficients associated with the galvanomagnetic, thermoelectric, and thermomagnetic effects in a semiconductor are derived from the Boltzmann transport equation using the relaxation time approximation. In the event that the relaxation time approximation fails, the solutions for the Boltzmann transport equation could be obtained using variational principles.
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Li, S.S. (2006). Transport Properties of Semiconductors. In: Li, S.S. (eds) Semiconductor Physical Electronics. Springer, New York, NY. https://doi.org/10.1007/0-387-37766-2_7
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DOI: https://doi.org/10.1007/0-387-37766-2_7
Publisher Name: Springer, New York, NY
Print ISBN: 978-0-387-28893-2
Online ISBN: 978-0-387-37766-7
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