Abstract
In this chapter, the basic device physics, the ideal static and dynamic characteristics, the operation principles, and practical applications of p-n junctions will be described. Unlike a Schottky diode (a majority carrier device), a p-n junction diode is known as a minority carrier device since the current conduction is controlled by the diffusion of minority carriers (i.e., electrons in the p region and holes in the n region) in a p-n junction diode.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
W. Shockley, Bell Syst. Tech. J., 28, 435 (1949); Electrons and Holes in Semiconductors, D. Van Nostrand, Princeton, N. J. (1950).
C. T. Sah and R. N. Noyce, Proc. IRE 45, 1228 (1957).
J. L. Moll, Proc. IRE 46, 1076 (1958).
A. S. Grove, Physics and Technology of Semiconductor Devices, Chapter 6, Wiley, New York (1967), p. 192.
S. M. Sze and G. Gibbons, Appl. Phys. Lett. 8, 111 (1966).
R. L. Anderson, Solid State Electron. 5, 341 (1962).
Bibliography
R. Dingle, H. L. Stormer, A. C. Gossard, and W. Wiegmann, Appl. Phys. Lett. 33, 665 (1978).
W R. Frensky and H. Kroemer, Phys. Rev. B 16, 2642 (1977).
R. N. Hall, Phys. Rev. 87, 387 (1952).
A. G. Miles and D. L. Feucht, Heterojunctions and Metal–Semiconductor Junctions, Academic Press, New York (1972).
J. L. Moll, Physics of Semiconductors, McGraw-Hill, New York (1964).
R. S. Muller and T. L Kamins, Device Electronics for Integrated Circuits, Wiley, New York (1977).
C. T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE 45, 1228 (1957).
W. Shockey, Electrons and Holes in Semiconductors, Van Nostrand, Princeton (1950).
W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952).
S. M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York (1981).
E. S. Yang, Microelectronic Devices, McGraw-Hill, New York (1988).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2006 Springer
About this chapter
Cite this chapter
Li, S.S. (2006). p-n Junction Diodes. In: Li, S.S. (eds) Semiconductor Physical Electronics. Springer, New York, NY. https://doi.org/10.1007/0-387-37766-2_11
Download citation
DOI: https://doi.org/10.1007/0-387-37766-2_11
Publisher Name: Springer, New York, NY
Print ISBN: 978-0-387-28893-2
Online ISBN: 978-0-387-37766-7
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)