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Self-Assembled Si1-x Ge x Dots and Islands

  • Chapter
Self-Organized Nanoscale Materials

Part of the book series: Nanostructure Science and Technology ((NST))

Abstract

The growth and properties of semiconductor quantum dots have been studied extensively in the last decade. These novel nanostructures offer interesting prospects for the development of new electronic or optoelectronic devices. In particular, if the size, shape, and positioning of those structures can be controlled, they become very attractive for applications such telecommunication wavelength-integrated photodetectors or tunable or single-photon light sources.

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Authors and Affiliations

  1. Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada

    Jean-Marc Baribeau & David J. Lockwood

  2. Institute for National Measurements Standards, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada

    Nelson L. Rowell

Authors
  1. Jean-Marc Baribeau
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  2. Nelson L. Rowell
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  3. David J. Lockwood
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Editors and Affiliations

  1. International Innovation Center, Kyoto University, Uji, Kyoto, 611–0011, Japan

    Motonari Adachi

  2. Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, K1A OR6, Canada

    David J. Lockwood

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Baribeau, JM., Rowell, N.L., Lockwood, D.J. (2006). Self-Assembled Si1-x Ge x Dots and Islands. In: Adachi, M., Lockwood, D.J. (eds) Self-Organized Nanoscale Materials. Nanostructure Science and Technology. Springer, New York, NY. https://doi.org/10.1007/0-387-27976-8_1

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