Abstract
When Lew Dawydowitsch Landau1 published his paper on the diamagnetism of metals [16], he was probably not aware of the importance of his calculation for quantum transport. In this publication he determined the quantized energy levels of free electrons in a homogeneous magnetic field
, where n ≥ 0 is an integer and ω c = eB/m is the cyclotron frequency. Similar calculations emphasizing the role of the sample edges were performed by V. Fock2 [17], C.G. Darwin [18], and Edward Teller3 [19]. The energy levels that we now call Landau levels played their first important role in experiments on the magnetoresistance of bismuth performed by L. Shubnikov and Wander Johannes de Haas4 in 1930 [20]. They found that the measured magnetoresistance oscillated as a function of magnetic field, an effect now called Shubnikov-de Haas effect. A theoretical description of this effect was, for example, given in Ref. [21].
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References
Lew Dawydowitsch Landau, * 22 January 1908, Baku, USSR, † 1 April 1968, Moscow, USSR; Nobel prize in physics 1962.
Vladimir Alexandrovich Fock, * 22 December 1898, St Petersburg, Russia, † 27 December 1974, Leningrad, Russia.
Edward Teller, * 15 January 1908, Budapest, Hungary
Wander Johannes de Haas, * 2 March 1878, Lisse, Holland, † 26 April 1960, Bilthoven, Netherlands.
Walter Kohn, * 9 March 1923, Vienna, Austria, Nobel prize in chemistry 1998 (with J.A. Pople).
After Leo Esaki, * 12 March 1925, Osaka, Japan; Nobel prize in physics 1973 (with I. Giaever and B.D. Josephson)
Ivar Giaever, * 5 April 1929, Bergen, Norway; Nobel price in physics 1973 (with L. Esaki and B.D. Josephson).
John Bardeen, * 23 May 1908, Madison (Wisconsin), USA, † 30 January 1991, Boston, USA; Nobel prizes in physics 1956 (with W.H. Brattain and W. Shockley) and in 1972 (with L.N. Cooper and J.R. Schrieffer).
From: transfer resistor; the planar bipolar transistor was patented in 1948, mass production started in 1951; already in 1963 the worldwide production of transistors was 1 billion pieces, higher than the established electron tube.
Walter Houser Brattain, * 10 February 1902, Amoy (today Xiamen, China), † 13 October 1987, Seattle, USA; Nobel prize in physics 1956 (with J. Bardeen and W. Shockley).
William Shockley, * 13 February 1910, London, England, † 12 August 1989, Stanford (California), USA; Nobel prize in physics 1956 (with J. Bardeen and W.H. Brattain).
the most famous variant is the silicon based MOSFET — Metal-Oxide Field Effect Transistor
Klaus von Klitzing, * 28 June 1943, Schroda, Poland; Nobel prize in physics 1985.
Daniel C. Tsui, * 1939, Henan, China; Nobel prize in physics 1998 (with H.L. Störnier and R.B. Laughlin).
Horst L. Störnier, * 6 April 1949, Frankfurt am Main, Germany; Nobel prize in physics 1998 (with R.B. Laughlin and D.C. Tsui).
Robert Laughlin, * 1 November 1950, Visalia, California, USA; Nobel prize in physics 1998 (with H. Stornier and D.C. Tsui).
David Joseph Bohm, * 26 December 1917, Wilkes-Barre, Pennsylvania, USA, † 27 October 1992.
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Ihn, T. (2004). Toward the microscopic understanding of conductance on a quantum mechanical basis. In: Electronic Quantum Transport in Mesoscopic Semiconductor Structures. Springer Tracts in Modern Physics, vol 192. Springer, New York, NY. https://doi.org/10.1007/0-387-21828-9_2
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DOI: https://doi.org/10.1007/0-387-21828-9_2
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