This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
C. R. Tretz, “Circuit Design in SOI: Concept of Floating Beta Ratio”, 2000 IEEE International SOI Conference, Oct. 2000, pp. 4–5.
H. Nii, et. al., “A Novel Lateral Bipolar Transistor with 67GHz f-max on Thin Film SOI for RF Analog Applications”, IEEE Trans. on Electron Devices, Vol. 47, No. 7, July 2000, pp. 1536–41
A. Marshall & K.G. Buss, “Automotive Semiconductor Switch Technologies”, IEEE Workshop on Electronics Applications in Transportation, Oct 18–19 1990. IEEE Cat No. 90TH0310-3, pp. 68–72.
A. Marshall & B. Grose, “Custom Automotive Requirements for Power Integrated Circuits”, Texas Instruments Technical Journal, March–April 1994, pp. 93–98.
T. Ohyanagi & A. Watanabe, “1.3μmcMOS technology merged with 90 V HG-DMOS SOI substrate” Proceedings 1997 IEEE international SOI Conference, Oct 1997, pp. 72–3.
B. Edholml, et. al., “Silicon-On-Diamond MOS-Transistors with Thermally Grown Gate Oxide”, Proceedings 1997 IEEE International SOI Conference, Oct 1997, pp. 30–31.
B. Edholm, Ph. D. Thesis, ISBN 91-554-3673-0, Uppsala University, Jan 1996.
B. Edholm, et. al., J. Electrochem. Soc., 143, 1996, pp. 1326–1334.
N. K. Annamalai, et. al., “Radiation response of silicon on diamond (SOD) devices”, IEEE Trans. Nuclear Sci., 40, 1993, pp. 1780–6.
A. Marshall, et.al. “Power Device Reliability”, Encyclopedia of Electronics, Wiley 1999, Volume 16, pp. 602–608.
T. Summerlin, et. al. “Technology Driven Design Challenges of Mixed Signal Power ASICs”, Power Conversion and Intelligent Motion Conference (PCIM), Poster Session, Nov 10–11, 1999: High Frequency Power Conversion Proceedings (HFPC), Nov 1999, pp. 267–273.
A. Marshall, “Intelligent Power Integrated Circuits — History and Overview”, Texas Instruments Technical Journal, March–April 1994, pp. 2–9
A. Marshall & J. Devore, “Power IC with EEPROM Programmable Switch Mode Regulators”, IEEE Journal of Solid State Circuits, Vol. 31, No. 9, September 1996, pp. 1351–6.
C. Eisenhut & J. W. Klein, “SIMOX Voltage References for Applications up to 275°C using the Threshold Difference Principle”, Proceedings 1997 IEEE International SOI Conference, Oct 1997, pp. 110–1.
R. P. Zingg, et. al., “850V DMOS-Switch in Silicon-on-Insulator with Specific Ron of 13 Ohm-mm2”, 2000 IEEE International SOI Conference, Oct. 2000, pp. 62–3.
A. Marshall & F. Carvajal, “Power+ Logic Methodology Applied to a Six Output Power Driver”, IEEE 1993 Bipolar/BicMOS Circuits and Technology Meeting, Minneapolis, Minnesota, Oct 4–5, 1993. IEEE Cat No. 93CH3315-9, pp. 72–75.
A. Marshall, “Power Integrated Circuits”, Encyclopedia of Electronics, Wiley 1999, Volume 16, pp. 699–706.
Appendix 1: (3.18)
K. Watabe, et. al., “An 0.8μm High-Voltage IC Using a Newly Designed 600-V Lateral P-Channel Dual-Action Device on SOI” IEEE Journal of Solid State Circuits, Vol 33, No. 9, Sept. 1998, pp. 1423–7.
A. Wagpmans, et. al., “3.5mW 2.5GHz Diversity Receiver and a 1.2mW 3.6GHz VCO in Silicon-On-Anything” ISSCC98, paper No. FP 16.3:A
R. Dekker, et. al., “An Ultra Low-Power RF bipolar technology on Glass”, IEDM, 1997, pp. 921–923.
P. G. M. Baltus & R. Dekker, “Optimizing RF Front Ends for Low Power”, IEEE Proceedings, Oct 2000, pp. 1546–1559.
Rights and permissions
Copyright information
© 2003 Kluwer Academic Publishers
About this chapter
Cite this chapter
(2003). Components. In: SOI Design. Springer, Boston, MA. https://doi.org/10.1007/0-306-48161-8_3
Download citation
DOI: https://doi.org/10.1007/0-306-48161-8_3
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-7923-7640-8
Online ISBN: 978-0-306-48161-1
eBook Packages: Springer Book Archive