Abstract
We have seen in previous chapters that the switching elements of the buck, boost, and several other dc-dc converters can be implemented using a transistor and diode. One might wonder why this is so, and how to realize semiconductor switches in general. These are worthwhile questions to ask, and switch implementation can depend on the power processing function being performed. The switches of inverters and cycloconverters require more complicated implementations than those of dc-dc converters. Also, the way in which a semiconductor switch is implemented can alter the behavior of a converter in ways not predicted by the ideal-switch analysis of the previous chapters—an example is the discontinuous conduction mode treated in the next chapter. The realization of switches using transistors and diodes is the subject of this chapter.
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References
R. D. Middlebrook, S. Ćuk, and W. Behen, “A New Battery Charger/Discharger Converter,” IEEE Power Electronics Specialists Conference, 1978 Record, pp. 251–255, June 1978.
H. Matsuo and F. Kurokawa, “New Solar Cell Power Supply System Using a Boost Type Bidirectional Dc-Dc Converter,” IEEE Power Electronics Specialists Conference, 1982 Record, pp. 14–19, June 1982.
M. Venturini, “A New Sine-Wave-In Sine-Wave-Out Conversion Technique Eliminates Reactive Elements,” Proceedings Seventh International Solid-State Power Conversion Conference (Powercon 7), pp. E3.1–E3.13, 1980.
K. D. T. Ngo, S. Ćuk, and R. D. Middlebrook, “A New Flyback Dc-to-Three-Phase Converter with Sinusoidal Outputs,” IEEE Power Electronics Specialists Conference, 1983 Record, pp. 377–388.
S. Ćuk, “Basics of Switched-Mode Power Conversion: Topologies, Magnetics, and Control,” Advances in Switched-Mode Power Conversion, Vol. II, Irvine CA: Teslaco, pp. 279–310, 1983.
L. Gyugi and B. Pelly, Static Power Frequency Changers: Theory, Performance, and Applications, New York: Wiley-Interscience, 1976.
R. S. Kagan and M. Chi, “Improving Power Supply Efficiency with MOSFET Synchronous Rectifiers,” Proceedings Ninth International Solid-State Power Conversion Conference (Powercon 9), pp. D4.1–D4.9, July 1982.
R. Blanchard and P. E. Thibodeau, “The Design of a High Efficiency, Low Voltage Power Supply Using MOSFET Synchronous Rectification and Current Mode Control,” IEEE Power Electronics Specialists Conference, 1985 Record, pp. 355–361, June 1985.
N. Mohan, T. Undeland, and W. Robbins, Power Electronics: Converters, Applications, and Design, 2nd edit, New York: John Wiley & Sons, 1995, Chapters 19–26.
C. L. Ma and P. O. Lauritzen, “A Simple Power Diode Model with Forward and Reverse Recovery,” IEEE Power Electronics Specialists Conference, 1991 Record, pp. 411–415, June 1991.
M. Schlecht and L. Casey, “A Comparison of the Square Wave and Quasi-Resonant Topologies,” IEEE Applied Power Electronics Conference, 1987 Record, pp. 124–134, March 1987.
B. J. Baliga, Modern Power Devices, New York: John Wiley & Sons, 1987.
P. Gray, D. DeWitt, A. Boothroyd, and J. Gibbons, Physical Electronics and Circuit Models of Transistors, Semiconductor Electronics Education Committee, Vol. 2, New York: John Wiley & Sons, 1964.
E. Oxner, Power FETs and Their Applications, Englewood, New Jersey: Prentice-Hall, 1982.
M. Rashid, Power Electronics: Circuits, Devices, and Applications, 2nd edit., Englewood, New Jersey: Prentice Hall, 1993, Chapters 3, 4, and 8.
B. J. Baliga, M. S. Adler, R. P. Love, P. V. Gray, and N. D. Zammer, “The Insulated Gate Transistor — A New Three Terminal MOS-Controlled Bipolar Power Device,” IEEE Transactions on Electron Devices, Vol. 31, No. 6, pp. 821–828, June 1984.
V. Temple, “MOS-Controlled Thyristors—A New Class of Power Devices,” IEEE Transactions on Electron Devices, Vol. 33, No. 10, pp. 1609–1618, October 1986.
S. Sul, F. Profumo, G. Cho, and T. Lipo, “MCTs and IGBTs: A Comparison of Performance in Power Electronics Circuits,” IEEE Power Electronics Specialists Conference, 1989 Record, pp. 163–169, June 1989.
V. Temple, S. Arthur, D. Watrous, R. De Doncker, and H. Metha, “Megawatt MOS Controlled Thyristor for High Voltage Power Circuits,” IEEE Power Electronics Specialists Conference, 1992 Record, pp. 1018–1025, June 1992.
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Erickson, R.W., Maksimović, D. (2001). Switch Realization. In: Fundamentals of Power Electronics. Springer, Boston, MA. https://doi.org/10.1007/0-306-48048-4_4
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DOI: https://doi.org/10.1007/0-306-48048-4_4
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