Summary
In this Chapter, we have described the general principles for electrical amplification and switching. We then modeled the amplification mechanisms, the charge distribution and transport in bipolar junction transistors. The advantages of heterojunction bipolar transistors have been discussed and illustrated with transistors based on AlGaAs/GaAs or GaInP/GaAs. Finally, the principles and electrical properties of field effect transistors were presented.
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References
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© 2002 Kluwer Academic Publishers
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(2002). Transistors. In: Fundamentals of Solid State Engineering. Springer, Boston, MA. https://doi.org/10.1007/0-306-47567-7_14
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DOI: https://doi.org/10.1007/0-306-47567-7_14
Publisher Name: Springer, Boston, MA
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