Summary
In this Chapter, we have reviewed a few of the steps involved in the fabrication of semiconductor devices, including oxidation, diffusion and ion implantation. Although the discussion was primarily based on silicon, the concepts introduced are applicable for the entire semiconductor industry.
We described the oxidation experimental process, mathematically modeled the formation of a silicon oxide film, discussed the factors influencing the oxidation and reviewed the methods used to characterize the oxide film. The diffusion and ion implantation of impurity dopants in silicon to achieve controlled doping in selected areas of a wafer was described, along with the resulting dopant concentration profiles inside the semiconductor. The predeposition and drive-in conditions of diffusion were discussed. Methods used to assess the electrical properties of the diffused or implanted layers were reviewed.
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References
Jaeger, R.C., Introduction to Microelectronic Fabrication, Addison-Wesley, New York, 1988.
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Further reading
Campbell, S.A., The Science and Engineering of Microelectronic Fabrication, Oxford University Press, New York, 1996.
Diaz, J.E., Fabrication of High Power Aluminum-Free 0.8 μm to 1.0 μm InGaP/InGaAsP/GaAs Lasers for Optical Pumping, Ph.D. dissertation, Northwestern University, 1997.
Fogiel, M., Microelectronics-Principle, Design Techniques, and Fabrication Processes, Research and Education Association, New York, 1968.
Ghandi, S., VLSI Fabrication Principles, John Wiley & Sons, New York, 1983.
Soclof, S., Design and Application of Anolog Integrated Circuits, Prentice-Hall, Englewood Cliffs, NJ, pp. 8–23, 1991.
Streetman, B.G., Solid State Electronic Devices, Prentice-Hall, Englewood Cliffs, NJ, pp. 65–70, 1980.
Trumbore, F.A., “Solid Solubilities of Impurity Elements in Germanium and Silicon,” Bell System Technical Journal 39, pp. 205–233, 1960.
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© 2002 Kluwer Academic Publishers
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(2002). Semiconductor Device Technology. In: Fundamentals of Solid State Engineering. Springer, Boston, MA. https://doi.org/10.1007/0-306-47567-7_12
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DOI: https://doi.org/10.1007/0-306-47567-7_12
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-7923-7629-3
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