Abstract
We consider scanning tunneling microscopy (STM) probe on porous GaP. Among STM effects causing image distortions, we distinguish tip effects and analyze tip shape effect, lateral effect and tip bending. We estimate maximum errors induced by these effects and perform image processing and analysis. Vital measures necessary for the STM probe on the porous matter are proposed.
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References
L.T Canham. Silicon quantum wire may fabrication by electrochemical and chemical dissolution of wafers, Appl. Phys. Lett. 57 (IO), 1046–1048 (1990).
A. Anedda, A. Serpi, V.A. Karavanskii, I.M. Tiginyanu, and V.M. Ichizli. Time resolved blue and ultraviolet photoluminescence in porous Gap, Appl. Phys. Lett. 67 (22), 3316–3318 (1995).
C.-H. Lin, S.-C. Lee, and Y.-F. Chen. Morphologies and photoluminescence of porous silicon under different etching and oxidation conditions, J. Appl. Phys. 75 (12), 7728–7736 (1994).
B.H. Erné, D. Vanmaekelbergh, and J.J. Kelly. Morphology and Strongly Enhance Photoresponse of GaP Electrodes Made Porous by Anodic Etching, J. Electrochem. Soc. 143 (1), 305–314 (1996).
I.M. Tiginyanu, C. Schwab, J.-J. Grob, B. Prévot, H.L. Hartnagel, A. Vogt, G. Irner, and J. Monecke. Ion implantation as a tool for controlling the morphology of porous gallium phosphide, Appl. Phys. Lett. 71 (26), 3829–3831 (1997).
Ph. Dumas, M. Gu, C. Syrykh, A. Hallimaoui, F. Salvan, J.K. Gimzewski, and R.R. Schlittler. Photon spectroscopy, mapping, and topography of 85% porous silicon, J. Vac. Sci. Technol. B 12 (3), 2064–2066 (1994).
M. Enachescu, E. Hartmann, and F. Koch. Stable nanostructuring of ultrathin porous silicon films by scanning tunneling microscopy, J. Appl. Phys. 79 (6), 2948–2953 (1996).
O. Teschke. Visualization of nanostructure porous silicon by a combination of transmission electron microscopy and atomic force microscopy, Appl. Phys. Lett. 68 (5), 2129–2131 (1996).
T. Fujii, M. Yamaguchi, M. Suzuki, H. Yamada, and K. Nakayama. Error budget of step height and pitch measurement using a scanning tunneling microscope with a three-dimensional interferometer, J. Vac. Sci. Technol. B 15 (4), 1494–1497 (1997).
S.J. Fang, S. Haplepete, W. Chen, C.R. Helms, and H. Edwards. Analyzing atomic force microscopy images using spectral methods, J. Appl. Phys. 82 (12), 5891–5898 (1997).
J.E. Castle and P.A. Zhdan. Characterization of surface topography by SEM and SFM: problems and solutions, J. Phys. D: Appl. Phys. 30,722–740 (1997).
K.L. Westra and D.J. Thomson. Effect of tip shape on surface roughness measurements from atomic force microscopy images of thin films, J. Vac. Sci. Technol. B 13 (2), 344–349 (1995).
R. Schlaf, D. Louder, M.W. Nelson, and B.A. Parkinson. Influence of electrostatic forces on the investigation of dopant atoms in layered semiconductors by scanning tunneling microscopy/spectroscopy and atomic force microscopy, J. Vac. Sci. Technol. A 15 (3), 1466–1472 (1997).
M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, and K. Murase. Metrology of atomic force microscopy for Si nano-structures, Jpn. J. Appl. Phys. 34,3382–3387 (1995).
C. Gerthsen, H.O. Kneser, and H. Vogel, Physik. Springer-Verlag. Berlin, p. 117 (1982)
E.C.W. Leung, P. Markiewicz, and M.C. Goh. Identification and visualization of questionable regions in atomic force, J. Vac. Sci. Technol. B 15 (2), 181–185 (1997).
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Ichizli, V., Droba, M., Vogt, A., Tiginyanu, I., Hartnagel, H. (2002). Peculiarities of the Scanning Tunneling Microscopy Probe on Porous Gallium Phosphide. In: Cohen, S.H., Lightbody, M.L. (eds) Atomic Force Microscopy/Scanning Tunneling Microscopy 3. Springer, Boston, MA. https://doi.org/10.1007/0-306-47095-0_14
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DOI: https://doi.org/10.1007/0-306-47095-0_14
Publisher Name: Springer, Boston, MA
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