Abstract
A novel plasma etcher with a substrate vibration mechanism has been developed for etch rate improvement. The etcher is based on an RIE(Reactive Ion Etching) system, in addition, it has an ultrasonic vibrator under the anode electrode. Two vibration frequencies of 28kHz and 40kHz can be applied to the substrate by changing vibration units, and they have vibration amplitudes of 7 to 8 microns.. Some results of silicon etching are shown by SEM micrographs compared to those without vibration. The system has confirmed to have improvements in etch rate by 50% and anisotropy.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Reference
Rob Legtenberg et.al.: Anisotropic reactive ion etching of silicon using SF6/O2/CHF3 gas mixtures, J Electronchem. Soc.,142-6,2020(1995)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2002 Kluwer Academic Publishers
About this chapter
Cite this chapter
Takeshi, H., Minoru, H., Masanori, H., Toshiaki, O. (2002). A Mechanical Vibration Assisted Plasma Etcher for Etch Rate Improvement. In: Inasaki, I. (eds) Initiatives of Precision Engineering at the Beginning of a Millennium. Springer, Boston, MA. https://doi.org/10.1007/0-306-47000-4_26
Download citation
DOI: https://doi.org/10.1007/0-306-47000-4_26
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-7923-7414-5
Online ISBN: 978-0-306-47000-4
eBook Packages: Springer Book Archive