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Impact of Oxide Engineering on Analog/RF Performance of Doping-Less DMDG MOSFET

  • Abhinav GuptaEmail author
  • Amrish Kumar
  • Sanjeev Rai
  • Rajeev Tripathi
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 587)

Abstract

In order to reduce short channel effects, a dual metal concept has been employed in MOSFETs. But to eliminate the problem of a gate tunneling dual material double gate (DMDG) MOSFET is not sufficient. Hence, to overcome gate tunneling oxide engineering technique has been employed in a DMDG MOSFET. In this paper, a doping-less dual material double gate (DL-DMDG) MOSFET has been analyzed using oxide engineering technique. To induce an n-type substrate in a doping-less MOSFET, charge plasma concept has been incorporated. Using 2D ATLAS simulator various analog/RF parameters have been investigated for this device with different oxide materials. The basic purpose of this paper is to improve analog/RF performance of the device and to increase immunity to SCEs.

Keywords

DL-DMDG MOSFET Charge plasma SCEs Analog/RF 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  • Abhinav Gupta
    • 1
    Email author
  • Amrish Kumar
    • 2
  • Sanjeev Rai
    • 2
  • Rajeev Tripathi
    • 2
  1. 1.Electronics Engineering Department, Rajkiya Engineering CollegeSonbhadraIndia
  2. 2.Department of Electronics and Communication EngineeringMotilal Nehru National Institute of TechnologyAllahabadIndia

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