Computation of Gate-Induced-Drain-Leakage Current Due to Band-to-Band Tunneling for Ultrathin MOSFET

  • Krishnendu Roy
  • Anal Roy Chowdhury
  • Arpan DeyasiEmail author
Conference paper
Part of the Lecture Notes in Networks and Systems book series (LNNS, volume 79)


In this paper, gate-induced-drain-leakage current due to band-to-band tunneling is analytically computed in nanometric MOSFET under high electric field. Fowler-Nordheim tunneling current is first calculated for different dielectric thicknesses with some alteration of Hu’s model, and dominance of thermionic current is established. Under this criterion, B–B tunneling current is evaluated as leakage arises due to the overlap of gate over source and drain regions, and dielectric properties along with doping concentration and temperature are taken into account following Kane’s tunneling probability. Role of high-K dielectric material is also analyzed for nanoscale application. Result shows that higher overlapping of gate length due to lateral diffusion of source and drain regions tailors the leakage current. Findings are extremely important for use of the device as SRAM.


Gate-induced-drain-leakage Gate overlap length High-K dielectric Band-to-band tunneling Doping concentration Dielectric thickness 


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© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  • Krishnendu Roy
    • 1
  • Anal Roy Chowdhury
    • 1
  • Arpan Deyasi
    • 2
    Email author
  1. 1.Department of Electronic ScienceA.P.C CollegeBarasatIndia
  2. 2.Department of Electronics and Communication EngineeringRCC Institute of Information TechnologyKolkataIndia

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