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Comparison of Photodetection Capability of Spin Coated TiO2 Thin Film and In2O3 Thin Film Devices

  • Rahul Raman
  • Amitabha Nath
  • Mitra Barun SarkarEmail author
Conference paper
  • 22 Downloads
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 1154)

Abstract

The fabrication of TiO2 thin film (TF) and In2O3 thin film (TF) separately using Spin Coating deposition technique and the analysis of their different characteristics like structural and optical properties has been reported in this paper and based upon the comparisons of these properties the superiority as a photodetector device of both the devices has been decided. The structural properties of both the prepared samples have been discussed and the FESEM characterization result confirms the Thin Film depositions. The UV-visible absorption characterization has been performed to reveal the optical properties of the fabricated samples in which the main band absorption was found at ~370 nm for TiO2 TF and ~274 nm for In2O3 TF structure. The Bandgap obtained for TiO2 TF was ~3.1 eV and that obtained for In2O3 TF was ~3.3 eV. This characterization result ensures the better performance of TiO2 TF as a photodetector as compared to In2O3 TF.

Keywords

Photodetection Spin Coating deposition technique Structural and optical property Thin film Bandgap 

Notes

Acknowledgements

Authors are grateful to Dr. Ardhendu Saha for providing Optical Absorption Spectroscopy facility, Centre of Excellence of Advanced Material, NIT Durgapur for providing FESEM characterization and NIT Agartala for all kind of supports.

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Copyright information

© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  • Rahul Raman
    • 1
  • Amitabha Nath
    • 1
  • Mitra Barun Sarkar
    • 1
    Email author
  1. 1.Department of Electronics and Communication EngineeringNational Institute of Technology AgartalaAgartalaIndia

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