Implementation of Program Page, Read Page and Block Erase Operations in NAND Flash Memory Controller

  • Ch. HariniEmail author
  • B. Keerthi Priya
  • D. V. Rama Koti Reddy
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 655)


In underwater, vehicles like AUV’S, submarines, etc., will travel underwater in hours or days depending on the requirement. The sensors and many subsystems are interfaced in these vehicles. The information from the sensors like direction, voltage and pressure parameter, etc., are collected and stored in the memory. These parameters from the memory and saved into the controlling system. The data is changed from min to min. Earlier NVRAMs used as a memory unit. It is heavy in size and suitable for larger ships and not for smaller in size vehicles. So the unit “NAND flash memory” is being used to store data and as chip. So it is suitable for all types of vehicles. Storage can be done in the form of bytes, pages and block types. “NAND flash memory controller” performs operations like program page, read page and block erase. A VHDL program is developed using a state machine for program page, read page and block erase operations. The simulation of the program and waveforms of program page, read page and block erase operations are using Xilinx software. The complete VHDL program testing is done in FPGA. A Xilinx Spartan-6 FPGA is used to interface the “NAND flash memory controller.”


NAND flash memory controller Flash memory 


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Copyright information

© Springer Nature Singapore Pte Ltd. 2021

Authors and Affiliations

  • Ch. Harini
    • 1
    Email author
  • B. Keerthi Priya
    • 1
  • D. V. Rama Koti Reddy
    • 2
  1. 1.Gayatri Vidya Parishad College of Engineering (A)VisakhapatnamIndia
  2. 2.Andhra University College of Engineering (A), Andhra UniversityVisakhapatnamIndia

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