Applications of Oxide-Channel Ferroelectric-Gate Thin-Film Transistors

  • Eisuke TokumitsuEmail author
  • Tatsuya Shimoda
Part of the Topics in Applied Physics book series (TAP, volume 131)


In this chapter, recent topics on oxide-channel ferroelectric-gate transistors were presented. First, nonvolatile memory circuit application of ferroelectric-gate transistors is discussed by comparing it with Flash memory. It is pointed out that “read disturb” may become serious in the memory circuits using ferroelectric-gate transistors in contrast to Flash memory. To solve the read disturb problem, two-transistor memory cell structures are presented for both NAND and NOR configurations. In NAND configuration, one memory cell consists of parallel connection of a memory transistor and a pass transistor, whereas one memory cell consists of series connection of a memory transistor and a cut-off transistor in NOR configuration. Next, two-transistor cell NAND memory arrays using oxide-channel ferroelectric-gate transistors for both memory and pass transistors have been fabricated. It is confirmed that the stored “off” data in unselected cells remain almost intact during the readout procedures of a selected cell. Next, solution process is demonstrated to fabricate oxide-channel ferroelectric-gate transistors. All-oxide, all-solution-processed ferroelectric-gate transistors are demonstrated. In addition, newly developed nano-rheology printing (n-RP) technology, which utilizes direct nanoimprint of oxide gel films, is used to fabricate oxide-channel ferroelectric thin-film transistors without using conventional lithography process.



The author would like to acknowledge members of JST ERATO, “Shimoda Nano-Liquid Process” project.


  1. 1.
    H. Ishiwara, M. Okuyama, Y. Arimoto (eds.), Ferroelectric Random Access Memories, Fundamentals and Applications (Springer, Berlin, 2004)Google Scholar
  2. 2.
    M. Okuyama, Y. Ishibashi (eds), Ferroelectric Thin Films, Basic Properties and Device Physics for Memory Applications (Springer, Berlin, 2005)Google Scholar
  3. 3.
    Y. Kaneko, H. Tanaka, M. Ueda, Y. Kato, E. Fujii, IEEE Trans. Electron Devices, 58, 1311 (2011)Google Scholar
  4. 4.
    H. Saiki, E. Tokumitsu, IEICE Trans. Electron. E87-C, 1700 (2004)Google Scholar
  5. 5.
    B.N.Q. Trinh, T. Miyasako, T. Kaneda, P.V. Thanh, P.T. Tue, E. Tokumitsu, T. Shimoda, in 2011 International Conference on Solid State Devices and Materials (SSDM), (Ext. Abst., Nagoya, 2011), p. 967Google Scholar
  6. 6.
    T. Miyasako, B.N.Q. Trinh, M. Onoue, T. Kaneda, P.T. Tue, E. Tokumitsu, T. Shimoda, Jpn. J. Appl. Phys., 50, 04DD09-1-6 (2011)Google Scholar
  7. 7.
    E. Tokumitsu, M. Senoo, T. Miyasako, Use of ferroelectric gate insulator for thin film transistors with ITO channel. J. Microelectr. Eng. 80, 305–308 (2005)Google Scholar
  8. 8.
    T. Miyasako, M. Senoo, E. Tokumitsu, Ferroelectric-gate thin–film transistors using indium-tin-oxide channel with large charge controllability. Appl. Phys. Lett. 86(16), 162902-1–162903 (2005)Google Scholar
  9. 9.
    T. Kaneda, D. Hirose, T. Miyasako, P.T. Tue, Y. Murakami, S. Kohara, J. Li, T. Mitani, E. Tokumitsu, T. Shimoda, J. Mater. Chem. C 2, 40–49 (2014)Google Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  1. 1.Green Devices Research Center, Japan Advanced Institute of Science and TechnologyNomiJapan
  2. 2.School of Materials ScienceJapan Advanced Institute of Science and TechnologyNomiJapan

Personalised recommendations