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Stress Effect on a-SiCN:H Waveguide at Terahertz Frequency for Sensing Application Using FDTD Technique

  • Chandra Sekhar Mishra
  • Gopinath PalaiEmail author
Conference paper
Part of the Lecture Notes on Data Engineering and Communications Technologies book series (LNDECT, volume 37)

Abstract

This article explores that a-SiCN:H-based photonic waveguide at terahertz frequency, which is investigated at wavelength of 632 nm using FDTD technique. The dispersion analysis is applied for computing the reflectance of a-SiCN:H waveguide with the help of finite difference time domain technique. The simulation upshot shows that transmitted intensity fluctuates in zigzag manner with respect to the compressive stress from −250 to −50 MPa at frequency 632 nm.

Keywords

FDTD Transmitted intensity a-SiCN:H 

References

  1. 1.
    C.S. Mishra, G. Palai, Temperature and pressure effect on GaN waveguide at 428.71 terahertz frequency for sensing application. Optik 126, 4685–4687 (2015)CrossRefGoogle Scholar
  2. 2.
    C.S. Mishra, K.K. Sethi, G. Palai, Bandgap analysis of quasi bandgap semiconductor using FDTD technique. J. Microelectron. Solid State Devices 2, 1–4 (2015)Google Scholar
  3. 3.
    C.S. Mishra, G. Palai, Manipulating light with porous silicon for investigation of porosity using finite difference time domain method. Optik 127, 1195–1197 (2016)CrossRefGoogle Scholar
  4. 4.
    A. Panda, C.S. Mishra, G. Palai, PWE approach to optical thyristor for investigation of doping concentration. Optik Int. J. Light Electron Opt 127, 4831–4833 (2016)CrossRefGoogle Scholar
  5. 5.
    A. Sukhoivanov, I.V. Guryev, Physics and Practical Modeling: Photonic Crystals (Springer, 2009)Google Scholar
  6. 6.
    M. Vijaya, G. Rangarajan, Materials Science (Tata McGraw-Hill Education, 2003)Google Scholar
  7. 7.
    C. Huber, B. Stein, H. Kalt, Plasma-enhanced chemical vapor deposition of amorphous silicon carbonitride: deposition temperature dependence of bonding structure, refractive index, mechanical stress and their aging under ambient air. Thin Solid Films 634, 66–72 (2017)CrossRefGoogle Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  1. 1.Department of Electronics and Communication EngineeringGandhi Institute for Technological Advancement (GITA)BhubaneswarIndia

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