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Surface Potential Profile of Nano Scaled Work Function Engineered Gate Recessed IR Silicon on Insulator MOSFET

  • Tiya Dey Malakar
  • Moutushi SinghEmail author
  • Subir Kumar Sarkar
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 1065)

Abstract

In this present analysis, we represent the surface potential profile of horizontally graded binary metal alloy gate (work function engineered gate) recessed source/drain (Re S/D) SOI/SON MOSFET with additional insulator region (I-SOI). The proposed structure is akin to that of the recessed S/D SOI MOSFET with the exception that there is an insulator region of high-k dielectric in between the channel and drain region. The analytical surface potential model has been developed by solving two-dimensional Poisson’s equation in the channel region considering appropriate boundary condition with a parabolic potential profile.

Keywords

High-k dielectric Short channel effects (SCEs) Recessed source/drain (Re S/D) Work function engineered gate (WFEG) 

References

  1. 1.
    Miura-Mattausch, M., Mattausch, H.J., Ezaki, T.: The Physics and modeling of MOSFET. World Scientific Publishing Co. Pte. Ltd., Singapore (2008)Google Scholar
  2. 2.
    Colinge, J.P.: Silicon on Insulator Technology: Materials to VLSI, 2nd edn. Kluwer Academic Publishers, Norwell (1997)CrossRefGoogle Scholar
  3. 3.
    Colinge, J.P.: Multi-gate SOI MOSFETs. Microelectron. Eng. 84, 2071–2076 (2007)CrossRefGoogle Scholar
  4. 4.
    Youssef Hammad, M., Schroder, D.K.: Analytical modeling of the partially-depleted SOI MOSFET. IEEE Trans. Electron Dev. 48(2), 252 (2001)CrossRefGoogle Scholar
  5. 5.
    Chen, J., Luo, J., Wu, Q., Chai, Z., Yu, T., Dong, Y., Wang, X.: A Tunnel diode body contact structure to suppress the floating-body effect in partially depleted SOI MOSFETs. IEEE Electron Dev. Lett. 32(10) (2011)CrossRefGoogle Scholar
  6. 6.
    Deb, S., et al.: Two dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs. J. Semiconductor 32(10) (2011)CrossRefGoogle Scholar
  7. 7.
    Deb, S., Basanta Singh, N., Das, D., De, A.K., Sarkar, S.K.: Analytical I-V model of SOI and SON MOSFETs: a comparative analysis. Int. J. Electron. 98(11), 1465–1481 (2011)CrossRefGoogle Scholar
  8. 8.
    Manna, B., Sarkhel, S., Ghosh, A., Singh, S.S., Sarkar, S.K.: Dual material gate nanoscale SON MOSFET: for better performance. Int. J. Comput. Appl. (IJCA) (2013). ISBN: 973-93-80875-27-15Google Scholar
  9. 9.
    Deb, S., et. al.: Work function engineering with linearly graded binary metal alloy gate electrode for short channel SOI MOSFET. IEEE Trans. Nanotechnol. 11(3), 472–478CrossRefGoogle Scholar
  10. 10.
    Manna, B., Sarkhel, S., Islam, N., Sarkar, S., Sarkar, S. K.: Spatial composition grading of binary metal alloy gate electrode for short-channel SOI/SON MOSFET application. IEEE Trans. Electron. Dev. 59(12), 3280–3287 (2012)CrossRefGoogle Scholar
  11. 11.
    Zhang, Z., Zhang, S., Chan, M.: Self-align recessed source/drain ultrathin body SOI MOSFET. IEEE Electron. Dev. Lett. 25, 740–742 (2004)CrossRefGoogle Scholar
  12. 12.
    Reddy, V., Jagadesh Kumar, M.: A new dual-material double-gate (DMDG) nanoscale SOI MOSFET-twodimensional analytical modeling and simulation. IEEE Trans. Electron. Dev. 4(2), 260–268 (2005)Google Scholar
  13. 13.
    Young, K.K.: Short-channel effects in fully depleted SOI MOSFET’s. IEEE Trans. Electron. Dev. 36, 399–402 (1989)CrossRefGoogle Scholar
  14. 14.
    Svilicic, B., et al.: Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs. Solid State Electron. 53, 540–547 (2009)CrossRefGoogle Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  • Tiya Dey Malakar
    • 1
  • Moutushi Singh
    • 2
    Email author
  • Subir Kumar Sarkar
    • 3
  1. 1.Department of Electronics and Communication EngineeringRCC Institute of Information TechnologyKolkataIndia
  2. 2.Department of Information TechnologyInstitute of Engineering and ManagementKolkataIndia
  3. 3.Department of ETCEJadavpur UniversityKolkataIndia

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