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Quantum Well Infrared Photodetector for the SWIR Range

  • Pedro Pereira
  • Lesslie Guerra
  • G. M. Penello
  • M. P. Pires
  • L. D. Pinto
  • R. Jakomin
  • R. T. Mourão
  • M. H. Degani
  • M. Z. Maialle
  • P. L. SouzaEmail author
Conference paper
Part of the Smart Innovation, Systems and Technologies book series (SIST, volume 152)

Abstract

An InGaAs/InAlAs superlattice infrared photodetector is developed to reach the forbidden gap in the SWIR range for arsenides, between 1.7 and 2.5 μm, appropriate for surveillance imaging. The figures of merit of the device are determined to be 120 K for the BLIP temperature and 2.1 mA/W and 3 × 106 Jones for the best responsivity and detectivity, respectively, obtained at 120 K under +4 V bias. Possible approaches to improve the device performance are addressed.

Keywords

QWIPs SWIR III-V semiconductors 

Notes

Acknowledgements

This work was partially supported by FAPERJ, CNPq, FINEP, CAPES and FAPESP.

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Copyright information

© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  • Pedro Pereira
    • 1
    • 2
  • Lesslie Guerra
    • 1
    • 2
  • G. M. Penello
    • 2
    • 3
  • M. P. Pires
    • 2
    • 3
  • L. D. Pinto
    • 1
    • 2
  • R. Jakomin
    • 2
    • 4
  • R. T. Mourão
    • 2
    • 3
  • M. H. Degani
    • 2
    • 5
  • M. Z. Maialle
    • 2
    • 5
  • P. L. Souza
    • 1
    • 2
    Email author
  1. 1.LabSem/CETUCPontifícia Universidade CatólicaRio de JaneiroBrazil
  2. 2.DISSE-Instituto Nacional de Ciência e Tecnologia de Nanodispositivos SemicondutoresPUC-RioRio de JaneiroBrazil
  3. 3.Instituto de FísicaUniversidade Federal do Rio de JaneiroRio de JaneiroBrazil
  4. 4.Campus de Xerém, Universidade Federal do Rio de JaneiroDuque de CaxiasBrazil
  5. 5.Faculdade de Ciências AplicadasUniversidade Estadual de CampinasLimeiraBrazil

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