Quantum Well Infrared Photodetector for the SWIR Range
An InGaAs/InAlAs superlattice infrared photodetector is developed to reach the forbidden gap in the SWIR range for arsenides, between 1.7 and 2.5 μm, appropriate for surveillance imaging. The figures of merit of the device are determined to be 120 K for the BLIP temperature and 2.1 mA/W and 3 × 106 Jones for the best responsivity and detectivity, respectively, obtained at 120 K under +4 V bias. Possible approaches to improve the device performance are addressed.
KeywordsQWIPs SWIR III-V semiconductors
This work was partially supported by FAPERJ, CNPq, FINEP, CAPES and FAPESP.
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