A Dielectric Modulated Polarity Controlled Electrically Doped Junctionless TFET Biosensor for IOT Applications

  • Deepak SoniEmail author
  • Amit Kumar Behera
  • Dheeraj Sharma
  • Mohd. Aslam
  • Shivendra Yadav
Conference paper
Part of the Smart Innovation, Systems and Technologies book series (SIST, volume 141)


In this manuscript, we investigate a new design of dielectric modulated polarity controlled electrically doped junctionless TFET (ED-JL-TFET) as highly receptive label-free biosensors. In the proposed structure, over the extensively doped n-type silicon substrate two electrode, gate electrode (GE) and source electrode (SE) are mounted having work function of 4.72 eV to alter the layer under GE and SE of intrinsic semiconductor. Further, for the formation of p\({^+}\) region −1.2 V is applied at source electrode (SE). Therefore, the structure resembles n\({^+}\)-i-n\({^+}\)-p\({^+}\) TFET. In addition to this, for the detection of biomolecule a nanogap cavity is setup in the gate oxide region near the source side. In this manuscript, the gate electrode of electrically doped junctionless TFET (ED-JL-TFET) is used to inflect the tunneling width for label free detection. Because of reduced fabrication challenges and cost effectiveness, ED-JL-TFET has been preferred as biosensor. Finally, the detection ability of ED-JL-TFET has been explored by varying charge density and dielectric constant of the biomolecule, height and length of the nanogap cavity region for different voltage condition by employing 2D Silvaco ATLAS TCAD device simulator.


Metallic strip Work function Band to band tunneling (BTBT) 


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Copyright information

© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  • Deepak Soni
    • 1
    Email author
  • Amit Kumar Behera
    • 1
  • Dheeraj Sharma
    • 1
  • Mohd. Aslam
    • 1
  • Shivendra Yadav
    • 1
  1. 1.PDPM Indian Institute of Information Technology, Design and ManufacturingJabalpurIndia

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