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The Main Damage Characteristics of Semiconductor Devices Under High-Power Microwave

  • Kaibai ChenEmail author
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 517)

Abstract

This paper takes the PIN diode as the main object of analysis, theoretically analyzes it’s operating principle and the type of damage occurring under the impact of the high-power microwave, and proposes that the damage characteristics of the device should be based on the time and energy.

Keywords

Damage characteristics High-power microwave PIN diode Secondary breakdown effects 

References

  1. 1.
    Schamiloglu, E.: High power microwave sources: where do we go from here? In: Conference Record of the Twenty-Fifth International IEEE Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. 30 June–3 July (pp. 190–191) (2002)Google Scholar
  2. 2.
    Doherty, W.E., Joos, R.D.: The PIN diode circuit designer’ handbook. Microsemi CorpGoogle Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2020

Authors and Affiliations

  1. 1.Shijiazhuang Campus of Army Engineering UniversityShijiazhuangChina

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