Innovative Nitride Film Deposition on Copper Interconnects of MEMS Devices Using Plasma-Enhanced Chemical Vapor Deposition Techniques

  • T. JagadeeshaEmail author
  • Louis Kim
Conference paper
Part of the Lecture Notes in Mechanical Engineering book series (LNME)


Advances in integrated circuit fabrication technology over the past two decades have resulted in integrated circuits with smaller device dimensions, larger area, and complexity. As the device size shrinks, process integration gets more complicated and interaction between the layers becomes very important. In this work, the silicon nitride layer is deposited on test wafers with different percentage of NH3 to study the effect of NH3 on film profile like step coverage and conformity. A stack of 5000 Å oxide was deposited on test wafers with low and H hydrogen nitride to study the effect of Cu diffusion and adhesion properties of nitride layer. The deposited wafers were etched to calculate the etch rate and etch rate dependence on hydrogen content. Furthermore, the low pressure CVD (LPCVD) process is used to deposit the nitride layer, and characteristics of low nitride with LPCVD layers are done using SEM analysis. Low H nitride developed in this work gives excellent copper diffusion resistance. Low H nitride gives good adhesion to the FSG layer. Low-H nitride film increases etch selectivity up to 30%. In addition, it also provides a larger process window for trench and via etching. In situ process developed in this work gives the highest productivity.


PMD CVD Passivation layer Low H nitride PMD nitride Micro-fabrication 


  1. 1.
    Wolf S, Tauber R (1986) Silicon processing for VLSI era, 2nd edn. Lattice, SAGoogle Scholar
  2. 2.
    Sze S (1988) VLSI technology, 1st edn. McGraw Hill, New YorkGoogle Scholar
  3. 3.
    Winderbaum S (2000) A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced and low pressure chemical vapor deposition silicon nitride films. J Vac Sci Technol A18:372–375Google Scholar
  4. 4.
    Bhushan S, Sundrajan S (1998) Micro/nanoscale friction and wear mechanisms of thin films using atomic force and friction force microscopy. Metal Acta 46:3793–3804Google Scholar
  5. 5.
    Sankaran A, Kushner MJ (2004) Integrated feature scale modeling of plasma processing of porous and solid SiO2. I. Fluorocarbon etching. J Vac Sci Technol A 22:1242 CrossRefGoogle Scholar
  6. 6.
    Rueger NR, Doemling MF (1999) Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor. J Vac Sci Technol A 17:2492CrossRefGoogle Scholar
  7. 7.
    Yota J (2000) A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films. J Vac Sci Technol A 18:372CrossRefGoogle Scholar
  8. 8.
    Ross CA (1999) Fabrication of patterned media for high density magnetic storage. J Vac Sci Technol 17:3168CrossRefGoogle Scholar
  9. 9.
    Flemish JR, Pfeffer RL (1993) Low hydrogen content silicon nitride films from electron cyclotron resonance plasmas. J Appl Phys 74:3277CrossRefGoogle Scholar
  10. 10.
    Lapeyrade M, Besland MP (1999) Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition. J Vac Sci Technol A 17:433CrossRefGoogle Scholar
  11. 11.
    Martin N, Rousselot C (1999) Instabilities of the reactive sputtering process involving one metallic target and two reactive gases. J Vac Sci Technol A 17:2869CrossRefGoogle Scholar
  12. 12.
    Tiron V, Velicu I-L, Pana I, Cristea D, Rusu BG, Dinca P, Porosnicu C, Grigore E, Munteanu D, Tascu S (2018) HiPIMS deposition of silicon nitride for solar cell. Surf Coat Technol 344:197–203CrossRefGoogle Scholar
  13. 13.
    Rai DK, Solanki CS, Balasubramaniam RK (2017) Growth of silicon nitride by nitridation of amorphous silicon at low temperature in hot-wire CVD. Mater Sci Semiconductor Process 67:46–54CrossRefGoogle Scholar
  14. 14.
    Dasmahapatra A, Kroll P (2018) Modeling amorphous silicon nitride: a comparative study of empirical potentials. Comput Mater Sci 148:165–175CrossRefGoogle Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  1. 1.National Institute of TechnologyCalicutIndia
  2. 2.Chartered Semiconductor ManufacturingSingaporeSingapore

Personalised recommendations