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Screen the Polarization Induced Electric Field Within the MQWs for DUV LEDs

  • Zi-Hui ZhangEmail author
  • Chunshuang Chu
  • Kangkai Tian
  • Yonghui Zhang
Chapter
Part of the SpringerBriefs in Applied Sciences and Technology book series (BRIEFSAPPLSCIENCES)

Abstract

This chapter discusses and presents different designs to screen the polarization level in the quantum wells for [0001]-oriented DUV LEDs. By doing so, the quantum confined Stark effect (QCSE) can be decreased. We suggest a simple way to reduce the QCSE by adopting Si-doped quantum barriers. Meanwhile, we also find that DUV LEDs are very sensitive to the polarization polarity, such that if nonpolar, semipolar and nitrogen-polar DUV LED structures are grown, we shall avoid using the p-AlGaN/p-GaN hole injection layer. The p-AlGaN/p-GaN hole injection layer can have remarkably hole depletion effect at the interface for those growth orientations except the [0001] orientation.

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Copyright information

© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  • Zi-Hui Zhang
    • 1
    Email author
  • Chunshuang Chu
    • 1
  • Kangkai Tian
    • 1
  • Yonghui Zhang
    • 1
  1. 1.School of Electronics and Information Engineering, Institute of Micro-Nano Photoelectron and Electromagnetic Technology InnovationHebei University of TechnologyTianjinChina

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