Advertisement

Improve the Current Spreading for DUV LEDs

  • Zi-Hui ZhangEmail author
  • Chunshuang Chu
  • Kangkai Tian
  • Yonghui Zhang
Chapter
Part of the SpringerBriefs in Applied Sciences and Technology book series (BRIEFSAPPLSCIENCES)

Abstract

After the crystalline quality for Al-rich AlGaN layer is significantly improved, it is then the time to design novel DUV LED structures. DUV LEDs are driven electrically which get carrier transport and current injection involved. One of the challenges is the current crowding effect, which easily occurs in the DUV LEDs. Hence, it is important to show people physical images on the underlying reason for the current crowding and the solution proposals for current spreading.

References

  1. 1.
    Ryu H-Y, Choi I-G, Choi H-S, Shim J-I (2013) Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes. Appl Phys Express 6(6):062101.  https://doi.org/10.7567/APEX.6.062101CrossRefGoogle Scholar
  2. 2.
    Maeda N, Hirayama H (2013) Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer. Phys Status Solidi C 10(11):1521–1524.  https://doi.org/10.1002/pssc.201300278CrossRefGoogle Scholar
  3. 3.
    Katsuragawa M, Sota S, Komori M, Anbe C, Takeuchi T, Sakai H, Amano H, Akasaki I (1998) Thermal ionization energy of Si and Mg in AlGaN. J Cryst Growth 189:528–531.  https://doi.org/10.1016/S0022-0248(98)00345-5CrossRefGoogle Scholar
  4. 4.
    Schubert EF (2006) Light-emitting diodes, 2nd edn. Cambridge University PressGoogle Scholar
  5. 5.
    Guo X, Schubert EF (2001) Current crowding in GaN/InGaN light emitting diodes on insulating substrates. J Appl Phys 90(8):4191–4195.  https://doi.org/10.1063/1.1403665CrossRefGoogle Scholar
  6. 6.
    Hao GD, Taniguchi M, Tamari N, Inoue S (2016) Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures. J Phys D-Appl Phys 49(23):235101.  https://doi.org/10.1088/0022-3727/49/23/235101CrossRefGoogle Scholar
  7. 7.
    Hao GD, Taniguchi M, Tamari N, Inoue S (2018) Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes. J Phys D-Appl Phys 51(3):035103.  https://doi.org/10.1088/1361-6463/aa9e0eCrossRefGoogle Scholar
  8. 8.
    Hrong RH, Zeng YY, Wang WK, Tsai CL, Fu YK, Kuo WH (2017) Transparent electrode design for AlGaN deep-ultraviolet light-emitting diodes. Opt Express 25(25):32206–32213.  https://doi.org/10.1364/OE.25.032206CrossRefGoogle Scholar
  9. 9.
    Kim KH, Fan ZY, Khizar M, Nakarmi ML, Lin JY, Jiang HX (2004) AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers. Appl Phys Lett 85(20):4777–4779.  https://doi.org/10.1063/1.1819506CrossRefGoogle Scholar

Copyright information

© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  • Zi-Hui Zhang
    • 1
    Email author
  • Chunshuang Chu
    • 1
  • Kangkai Tian
    • 1
  • Yonghui Zhang
    • 1
  1. 1.School of Electronics and Information Engineering, Institute of Micro-Nano Photoelectron and Electromagnetic Technology InnovationHebei University of TechnologyTianjinChina

Personalised recommendations