Mechanisms of Surface State Formation at Si/SiO2 Interface in the Nanosized MOS Transistors
The paper demonstrates the main physical mechanisms of the surface state generation at the interface Si/SiO2, which are typical for nanosized MOS transistors. We demonstrate the most common model of the surface state generation. One analyzes graphs showing a dependence of lifetime on substrate current (Isub), which are obtained from the literature. We demonstrate a method to determine charge carrier energy participating in the process of surface state generation and a method to ascertain the mechanism of surface state generation in nanosized MOS transistors. We ascertain main parameters of MOS transistors affecting the process of surface state generation.
KeywordsSurface states Si/SiO2 interface MOSFET Si–H bonds MOS transistors lifetime
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