Advertisement

Detection of Unreliable Superluminescent Diode Chips Using Gamma-Irradiation

  • P. B. LagovEmail author
  • V. M. Maslovsky
Conference paper
Part of the Lecture Notes in Mechanical Engineering book series (LNME)

Abstract

The influence of 60Co-irradiation accompanied by low-temperature treatment on AlGaAs/GaAs chips of 835 ± 25 nm superluminescent diodes (SLD) is addressed. It is shown that irradiation of potentially unreliable chips with latent defects in active 20-nm layer increases optical power degradation rate during the subsequent burn-in test. The possible cause of enhanced degradation of potentially unreliable chips during a long-term operation or gamma-ray irradiation is the presence of local defects, which can be rearranged into larger clusters commensurate with the active layer. The decrease in the degradation rate during the burn-in test for irradiated reliable chips probably caused by the mechanical stresses relaxation and its homogenization. A method for rejecting unreliable chips using gamma irradiation processing is proposed.

Keywords

Irradiation Chip Heterostructures Superluminescent diode Optical power Degradation Burn-in test 

References

  1. 1.
    Polyakov AY, Shmidt NM, Smirnov NB et al (2018) Defect states induced in GaN-based green light emitting diodes by electron irradiation. ECS J Solid State Sci Technol 7(6):323–328CrossRefGoogle Scholar
  2. 2.
    Lee I-H, Polyakov AY, Smirnov NB et al (2017) Point defects controlling non-radiative recombination in GaN blue light emitting diodes: insights from radiation damage experiments. J Appl Phys 122:115704CrossRefGoogle Scholar
  3. 3.
    Lee I-H, Polyakov AY, Smirnov NB et al (2017) Electron irradiation of near-UV GaN/InGaN light emitting diodes. Phys Status Solidi A 214(10):1700372CrossRefGoogle Scholar
  4. 4.
    Lee I-H, Polyakov AY, Smirnov NB et al (2017) Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes. ECS J Solid State Sci Technol 6(10):Q127–Q131CrossRefGoogle Scholar
  5. 5.
    Pavlov YS, Lagov PB (2015) Magnetic buncher accelerator for radiation hardness research and pulse detector characterization. In: Proceedings of the european conference on radiation and its effects on components and systems, RADECS 2015, pp 336–338, 7365629, Dec 2015Google Scholar
  6. 6.
    Pavlov YS, Surma AM, Lagov PB et al (2016) Accelerator-based electron beam technologies for modification of bipolar semiconductor devices. JPCS 747(1):012085Google Scholar
  7. 7.
    Lagov PB, Drenin AS, Zinovjev MA (2017) Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing. JPCS 830(1):012152Google Scholar
  8. 8.
    Clayes C, Simoen C (2002) Radiation effects in advanced semiconductor materials and devices. Springer, Berlin, Heidelberg, pp 281–330Google Scholar
  9. 9.
    Pogrebnyak AD, Shpak AP, Azarenkov NA et al (2009) Structures and properties of hard and superhard nanocomposite coatings. Phys-Usp 52:29–54CrossRefGoogle Scholar
  10. 10.
    Pogrebnjak AD, Bagdasaryan AA, Yakushchenko IV (2014) The structure and properties of high-entropy alloys and nitride coatings based on them. Russ Chem Rev 83:1027–1061CrossRefGoogle Scholar
  11. 11.
    Pogrebnjak AD, Beresnev VM, Smyrnova KV et al (2018) The influence of nitrogen pressure on the fabrication of the two-phase superhard nanocomposite (TiZrNbAlYCr)N coatings. Mater Lett 211:316–318CrossRefGoogle Scholar
  12. 12.
    Smyrnova KV, Pogrebnjak AD, Beresnev VM et al (2018) Microstructure and physical-mechanical properties of (TiAlSiY)N nanostructured coatings under different energy conditions. Met Mater Int 24(5):1024–1035CrossRefGoogle Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  1. 1.National University of Science and Technology “MISiS”MoscowRussia
  2. 2.Moscow Institute of Physics and TechnologyDolgoprudny, Moscow RegionRussia

Personalised recommendations