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Liquid Vapor Deposition Using Liquid Silicon (LVD)

  • Tatsuya Shimoda
Chapter
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Abstract

In  Chap. 4, a liquid process using silicon ink was described along to the centered production steps shown in  Fig. 2.2. In the figure, the other path which enables the fabrication of amorphous silicon films from liquid silicon is also shown at the left side of it. This path is named a liquid-source vapor deposition (LVD) method, which is a kind of thermal CVD in inert gas at atmospheric pressure. In particular, the LVD uses CPS, which is a liquid state, as a gas source. The unique feature of CPS makes the deposition of amorphous silicon possible. Although the LVD is not a liquid process, it utilizes a unique feature of liquid silicon. So it is worth introducing as a variation of liquid process.

In Sect. 5.1, the possibility of the LVD method to make a good amorphous Si films was demonstrated with using a very simple experimental set. The deposition chamber was a petri dish! It was put on a substrate which was heated on a hot plate. Small amount of CPS was attached to the corners of the petri dish and vaporized within the petri dish. Vaporized CPS decomposed and transformed immediately into a-Si:H on the substrate surface. We deposited both intrinsic and doped a-Si:H films at the temperature of 370 °C in nitrogen gas at atmospheric pressure. Deposition process of the LVD was studied, and the properties of the resultant films were investigated.

In Sect. 5.2, a new sophisticated deposition system for LVD, which has better controllability by introducing a unique structure, was developed. In the experimental set used in Sect. 5.1, there was no way to control parameters of evaporation and deposition. As a result, the film quality being represented by a microstructure factor (MSF) was inferior to those obtained by conventional CVD methods. The developed new deposition system enables controlling two process parameters, i.e., processing temperature and CPS supply speed, separately to optimize the process condition. The MSF was improved from 61.2% to 21.4%, while the bandgap was kept constant. The a-Si:H film prepared at 360 °C showed the best performance with the highest photoconductivity of 1.09 × 105 S cm−1 and the lowest dark conductivity of 1.71 × 1011 S cm−1.

This system offers a simple instrument for depositing an a-Si:H film with semiconductor device compatibility, obtaining a high raw material conversion rate and reducing precursor loss. This system doesn’t require storage of large amounts of hazardous gases, since CPS, white phosphorus, and decaborane are in liquid or solid state.

Keywords

Liquid vapor deposition (LVD) Cyclopentasilane (CPS) Non-vacuum processing Hydrogen radical 
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References

  1. 1.
    T. Masuda, H. Takagishi, Z. Shen, K. Ohdaira, T. Shimoda, Thin Solid Films 589, 221 (2015)CrossRefGoogle Scholar
  2. 2.
    E. Hengge, G. Bauer, Angew. Chem. Int. Ed. 12, 316 (1973)CrossRefGoogle Scholar
  3. 3.
    T. Masuda, Y. Matsuki, T. Shimoda, Polymer 53, 2973 (2012)CrossRefGoogle Scholar
  4. 4.
    E. Hengge, in Plenary Lecture at the 5th International Symposium on Organosilicon Chemistry (Karlsruhe, 1978), p. 14Google Scholar
  5. 5.
    T. Masuda, Y. Matsuki, T. Shimoda, Thin Solid Films 520, 6603 (2012)CrossRefGoogle Scholar
  6. 6.
    N.N. Greenwood, A. Earnshaw, Chemistry of the Elements, 2nd edn. (Butterworth-Heinemann/University of Leeds, Oxford/Leeds, 1997)Google Scholar
  7. 7.
    H. Overhof, P. Thomas, Electronic Transport in Hydrogenated Amorphous Semiconductors (Springer, New-York, 1989)CrossRefGoogle Scholar
  8. 8.
    H. Fritzsche, Sol. Energy Mater. 3, 447 (1980)CrossRefGoogle Scholar
  9. 9.
    W.E. Spear, Philos. Mag. B 41, 419 (1980)CrossRefGoogle Scholar
  10. 10.
    N.F. Mott, E.A. Davis, Electronic processes in noncrystalline materials (Oxford University Press, Oxford, 1979)Google Scholar
  11. 11.
    W.E. Spear, P.G.L. Comber, Philos. Mag. 33, 935 (1976)CrossRefGoogle Scholar
  12. 12.
    J. Tauc, R. Grigorovici, A. Vancu, Phys. Status Solidi 15, 627 (1966)CrossRefGoogle Scholar
  13. 13.
    C.C. Tsai, Phys. Rev. B 19, 2041 (1979)CrossRefGoogle Scholar
  14. 14.
    W.E. Spear, P.G.L. Comber, Solid State Commun. 17, 1193 (1975)CrossRefGoogle Scholar
  15. 15.
    J. Mullerovs, P. Sutta, G.v. Elzakker, M. Zeman, M. Mikula, Appl. Surf. Sci. 254, 3690 (2008)CrossRefGoogle Scholar
  16. 16.
    E. Bhattacharya, A.H. Mahan, Appl. Phys. Lett. 52, 1587 (1988)CrossRefGoogle Scholar
  17. 17.
    U. Kroll, J. Meier, P. Torres, J. Pohl, A. Shah, J. Non-Cryst. Solids 68, 227 (1998)Google Scholar
  18. 18.
    M.H. Brodsky, M. Cardona, J.J. Cuomo, Phys. Rev. B 16, 3556 (1977)CrossRefGoogle Scholar
  19. 19.
    A.A. Langford, M.L. Fleet, B.P. Nelson, W.A. Lanford, N. Maley, Phys. Rev. B 45, 13367 (1992)CrossRefGoogle Scholar
  20. 20.
    R.A. Street, C.C. Tsai, J. Kakalios, W.B. Jackson, Philos. Mag. B 56, 305 (1987)CrossRefGoogle Scholar
  21. 21.
    W. Beyer, J. Herion, H. Wagner, J. Non-Cryst. Solids 114, 217 (1989)CrossRefGoogle Scholar
  22. 22.
    W.E. Keller, H.L. Johnston, J. Chem. Phys. 20, 1749 (1952)CrossRefGoogle Scholar
  23. 23.
    B. Siegela, J.L. Mack, J. Phys. Chem. 62, 373 (1958)CrossRefGoogle Scholar
  24. 24.
    H.C. Beachell, J.F. Haugh, J. Am. Chem. Soc. 80, 2939 (1958)CrossRefGoogle Scholar
  25. 25.
    K. Tsutsui, T. Matsuda, M. Watanabe, C.H. Jin, Y. Sasaki, B. Mizuno, E. Ikenaga, K. Kakushima, P. Ahmet, T. Maruizumi, H. Nohira, T. Hattori, H. Iwai, J. Appl. Phys. 104, 093709 (2008)CrossRefGoogle Scholar
  26. 26.
    Z. Shen, T. Masuda, H. Takagishi, K. Ohdaira, T. Shimoda, Chem. Commun. 51, 4417 (2015)CrossRefGoogle Scholar
  27. 27.
    G. Lucovsky, R.J. Nemanich, J.C. Knights, Phys. Rev. B 19, 2064 (1979)CrossRefGoogle Scholar
  28. 28.
    U. Kroll, J. Meier, A. Shah, S. Mikhailov, J. Weber, J. Appl. Phys. 80, 4971 (1996)CrossRefGoogle Scholar
  29. 29.
    H. Shanks, C.J. Fang, L. Ley, M. Cardona, F.J. Demond, S. Kalbitzer, Phys. Status Solidi B 110, 43 (1980)CrossRefGoogle Scholar
  30. 30.
    E. Hengge, G. Bauer, Monatshefte fur Chemie, vol 106 (1975), p. 503Google Scholar

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© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  • Tatsuya Shimoda
    • 1
  1. 1.Japan Advanced Institute of Science and TechnologyNomiJapan

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