• Tae-Ho LeeEmail author
Part of the Springer Theses book series (Springer Theses)


In this study, Synthesis of a homogeneous KN film was difficult because of the evaporation of K2O during the growth process. The KN film should be deposited at RT to avoid the evaporation of K2O since the K-deficient K2.88Nb5O15 secondary phase was formed in the KN film grown at the very low temperature of 100 °C. Moreover, the annealing of KN films should be conducted at 800 °C, because when the annealing temperature is greater than that, a K-deficient K2.88Nb5O15 secondary phase is also formed. Moreover, a transient KNb3O8 secondary phase was formed when the annealing temperature was less than 800 °C.

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© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  1. 1.Korea Electronics Technology InstituteSeongnamKorea (Republic of)

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