Characterization and Variable Temperature Modeling of SiC MOSFET

  • Mengzhu Wang
  • Yujia Guo
  • Lei Wang
  • Guofu Chen
  • Ruichang Qiu
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 482)

Abstract

Silicon power semiconductor device is difficult to meet the requirements of high temperature, high pressure and high frequency. Among them, the MOSFET which has the fast switch speed and the simple driving circuit, become the most popular object in SiC power electronic devices. In this paper, we choose the C2M0160120D chip of CREE company, establishing a complete model. And the static characteristics of SiC MOSFET under different temperature points are simulated. The switching characteristics of SiC MOSFET under different driving resistances are analyzed and compared with the experimental results, and the accuracy of the model is verified in this paper.

Keywords

SiC MOSFET Simulation model Pspice Characteristic analysis 

Notes

Acknowledgements

This work was supported by the Fundamental Research Funds for the Central Universities of China (No. E16JB00160/2016JBM062/2016JBM058) and The National Key Research and Development Program of China (2016YFB1200504-C-02).

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Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  • Mengzhu Wang
    • 1
  • Yujia Guo
    • 1
  • Lei Wang
    • 1
  • Guofu Chen
    • 2
  • Ruichang Qiu
    • 1
  1. 1.School of Electrical EngineeringBeijing Jiaotong UniversityHaidian District, BeijingChina
  2. 2.State Key Laboratory of Advanced Power Transmission TechnologyGlobal Energy Interconnection Research InstituteBeijingChina

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