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Scanning Capacitance Microscopy

  • Nobuyuki NakagiriEmail author
Chapter

Abstract

As shown in Fig. 88.1, a very small MOS (metal–oxide–silicon) structure is formed by contacting the metallic tip of the AFM (Atomic Force Microscopy) to the oxide surface of the silicon sample.

Keywords

SPM MOS Capacitance Semiconductor Dopant and carrier density 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  1. 1.Tsukuba Research LaboratoryNikon CorporationTsukubaJapan

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