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Electron-Beam-Induced Current

  • Jun ChenEmail author
  • Takashi Sekiguchi
Chapter

Abstract

If we irradiate an electron beam onto a semiconductor, electrons and holes are generated within the volume where e-beam reaches. The generated carriers undergo diffusion and recombination to reach a new equilibrium. If there exists an electric field such as Schottky contact or p-n junction, the excess electrons and holes are collected by this field.

Keywords

Semiconductor Dislocation Grain boundary Leakage 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  1. 1.International Center for Material NanoarchitectonicsNational Institute for Materials ScienceTsukubaJapan

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