BORON10 Isotope Based Neutron Radiation Semiconductor Sensors
- 28 Downloads
Nowadays it is highly important to have instruments for subatomic particles – neutrons monitoring with the high sensitivity that will prohibit widespread harsh environmental pollution, and with the capabilities to provide quantitative information as well as alarm functions. The development of new range of sensor materials has provided devices with enhanced selectivity and sensitivity.
Elaborated physical principles of work of 10B isotopes doped semiconductor nanosensitive elements and basis of their fabrication technology determine development of high-efficient nanosensors of the new construction.
It was found that Boron-containing materials mainly semiconductors are the best because of B10 isotope’s special neutron capture properties. Since neutrons are uncharged their detection depends on the secondary ionizing processes induced by the products of neutron capture reactions, most important of which is the capture by a 10B nucleus.
It was investigated: the peculiarities of the technology of laying the semiconductor Si thin films doped by 10B isotopes and studying the possibility of control of concentration and properties of Boron in Si nanostructures; parameters and main electro-physical characteristics of nanosensory elements; possibilities of their unification into sensory systems.
It was found that 7Li born as result that nuclear-chemical reaction is the shallow donor in Silicon nanostructures that positively influence on sensor element’s sensitivity.
Within the frame of the work it was done the comparative analysis of conditions of preparation 10B isotope contained neutron sensitive elements based on crystals of elementary Boron, Boron Carbide, Boron Nitride, and other different semiconductors included elementary ones and alloys.
KeywordsSemiconductor Nanostructure 10B isotope Neutron sensor
I express my acknowledgment to all colleagues having collaborated with me in experimental, theoretical and technological activities and contributed to the development of work partly presented in this paper.
- 1.Omoto A (2014) Japan’s nuclear R&D activities, The 15th FNCA ministerial level meeting, Sydney, Australia, November 19Google Scholar
- 2.Kervalishvili PJ (2012) Boron isotopes doped germanium and silicon based gamma and neutron radiation nanosensors. In: Book of 2nd international conference “nanotechnologies”, nano – 2012, September 19–21, Tbilisi, Georgia, p 120Google Scholar
- 3.Murty KL (2012) Chapter I: An introduction to nuclear materials: fundamentals and applications. Wiley/VCH, BerlinGoogle Scholar
- 4.Kervalishvili PJ (2012) Boron isotopes doped germanium and silicon based gamma and neutron radiation nanosensors. In: Book of 2nd interantional conference “nanotechnologies”, nano – 2012, September 19–21, 2012, Tbilisi, Georgia, p 120Google Scholar
- 5.Kervalishvili PJ, Yannakopoulos PH (2016) Nuclear radiation nanosensors and Nanosensory systems. In: NATO science for peace and security series B: physics, and biophysics. Springer, Dordrecht. 200pGoogle Scholar
- 6.Kervalishvili P (2009) Some neutron absorbing elements and devices for fast nuclear reactors regulation systems. NATO conference nuclear safety and security, Yerevan, Armenia, May 26–29Google Scholar
- 9.Japanese Society of Neutron Capture Therapy.[c/o Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, R1–13, 4259 Nagatsuta-cho, Midori-ku, Yokohama, 226–8503, JAPAN]Google Scholar
- 10.National Nuclear Data Center. “NuDat 2.1 database”. Brookhaven National Laboratory. Retrieved 23 February (2017)Google Scholar
- 11.Kervalishvili PJ (2009) Boron based neutron absorbing elements and control systems. Abstracts – NATO Advanced Research Workshop, Boron Rich Solids, Orlando, Florida, USAGoogle Scholar
- 12.Rauschenbach HS (2012) Solar cell array design handbook: the principles and technology of photovoltaic energy conversion. Springer Science & Business Media, New York, p 157–. ISBN 978-94-011-7915-7Google Scholar
- 13.Weinberg I, Brandhorst Jr HW (1984) U.S. Patent 4,608,452, Lithium counter doped silicon solar cellGoogle Scholar
- 15.Kervalishvili P, Shalamberidze S (1993) Semiconductor material film production by laser plasma deposition. Le Vide, le Couches Minces N267:189–197Google Scholar
- 16.Kervalishvili PJ, Berberashvili TM, Chakhvashvili LA, Goderdzishvili G, Yannakopoulos P, Davaris A (2011) Nuclear radiation nanosensors and nanosensory systems. eRA-6 – The Synergy Forum, International scientific conference, Piraeus, Greece 19–24 SeptemberGoogle Scholar
- 18.Kottou S, Nikolopoulos D, Petraki E, Bhattacharyya D, Kirby PB, Berberashvili TM, Chakhvashvili LA, Kervalishvili PJ, Yannakopoulos PH (2015) Monte-Carlo modelling and experimental study of radon and progeny radiation detectors for open environment. In: Progress in clean energy, volume 1, analysis and modeling. Springer International Publishing, Cham, pp 787–803CrossRefGoogle Scholar
- 19.Kervalishvili PJ (2015) Novel approaches to nanosensory systems development. Am J Condens Matter Phys 5(1):1–9Google Scholar
- 20.Kervalishvili P, Berberashvili T, Chakhvashvili L (2011) About some novel nanosensors and nanosensory systems. Nano 4:155–164Google Scholar
- 21.Kervalishvili P (1990) About isotopic effect at interaction of substances with oxygen. J At Energ 68(N1):36–41Google Scholar
- 22.Kervalishvili PJ (2014) About isotope effects in condensed matter. Bull Russ Acad Nat Sci N1:3–10Google Scholar