BORON10 Isotope Based Neutron Radiation Semiconductor Sensors

  • Paata J. Kervalishvili
Conference paper
Part of the NATO Science for Peace and Security Series C: Environmental Security book series (NAPSC)


Nowadays it is highly important to have instruments for subatomic particles – neutrons monitoring with the high sensitivity that will prohibit widespread harsh environmental pollution, and with the capabilities to provide quantitative information as well as alarm functions. The development of new range of sensor materials has provided devices with enhanced selectivity and sensitivity.

Elaborated physical principles of work of 10B isotopes doped semiconductor nanosensitive elements and basis of their fabrication technology determine development of high-efficient nanosensors of the new construction.

It was found that Boron-containing materials mainly semiconductors are the best because of B10 isotope’s special neutron capture properties. Since neutrons are uncharged their detection depends on the secondary ionizing processes induced by the products of neutron capture reactions, most important of which is the capture by a 10B nucleus.

It was investigated: the peculiarities of the technology of laying the semiconductor Si thin films doped by 10B isotopes and studying the possibility of control of concentration and properties of Boron in Si nanostructures; parameters and main electro-physical characteristics of nanosensory elements; possibilities of their unification into sensory systems.

It was found that 7Li born as result that nuclear-chemical reaction is the shallow donor in Silicon nanostructures that positively influence on sensor element’s sensitivity.

Within the frame of the work it was done the comparative analysis of conditions of preparation 10B isotope contained neutron sensitive elements based on crystals of elementary Boron, Boron Carbide, Boron Nitride, and other different semiconductors included elementary ones and alloys.


Semiconductor Nanostructure 10B isotope Neutron sensor 



I express my acknowledgment to all colleagues having collaborated with me in experimental, theoretical and technological activities and contributed to the development of work partly presented in this paper.


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Copyright information

© Springer Nature B.V. 2020

Authors and Affiliations

  • Paata J. Kervalishvili
    • 1
  1. 1.Georgian Technical UniversityTbilisiGeorgia

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