Electrical Measurements of the Dimensions of Nanostructures
We propose to use measurements of electrical resistance for estimation of the geometric dimensions of nanostructures made of conductive materials. Transistors, resistors and conductive paths inside integrated circuits are fabricated in a form of thin films of progressively smaller size. At present (2017) microprocessors of fabrication technology of 10 nm have been manufactured. The technology of 7 nm will be implemented next year and the technology of 5 nm is expected in 10 years. The dimension of 10 or 5 nm refers to the length of a gate of a MOSFET transistor inside the chip. For the next generation of nanostructures, the 3D nanostructures, their scaling will be continued and measurements of them will be also necessary.
KeywordsMeasurements on nanostructures Conductance quantization
The authors are grateful for funding their scientific cooperation with the Bogoliubov – Infeld Programme fund. The paper was prepared with the financial support of the project No. 08/83/DSPB/4724 at Poznan University of Technology, Poland.
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