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Electrical Measurements of the Dimensions of Nanostructures

  • W. Nawrocki
  • Yu. M. Shukrinov
Conference paper
Part of the NATO Science for Peace and Security Series A: Chemistry and Biology book series (NAPSA)

Abstract

We propose to use measurements of electrical resistance for estimation of the geometric dimensions of nanostructures made of conductive materials. Transistors, resistors and conductive paths inside integrated circuits are fabricated in a form of thin films of progressively smaller size. At present (2017) microprocessors of fabrication technology of 10 nm have been manufactured. The technology of 7 nm will be implemented next year and the technology of 5 nm is expected in 10 years. The dimension of 10 or 5 nm refers to the length of a gate of a MOSFET transistor inside the chip. For the next generation of nanostructures, the 3D nanostructures, their scaling will be continued and measurements of them will be also necessary.

Keywords

Measurements on nanostructures Conductance quantization 

Notes

Acknowledgements

The authors are grateful for funding their scientific cooperation with the Bogoliubov – Infeld Programme fund. The paper was prepared with the financial support of the project No. 08/83/DSPB/4724 at Poznan University of Technology, Poland.

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Copyright information

© Springer Science+Business Media B.V., part of Springer Nature 2018

Authors and Affiliations

  1. 1.Faculty of Electronics and TelecommunicationsPoznan University of TechnologyPoznanPoland
  2. 2.Join Institute for Nuclear Research, BLTPDubnaRussia

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