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Experimental Study of Spectral Parameters of Silicon-Vacancy Centers in MWCVD Nanodiamond Films Important for Sensing Applications

  • L. Himics
  • M. Veres
  • S. Tóth
  • I. Rigó
  • M. Koós
Conference paper
Part of the NATO Science for Peace and Security Series B: Physics and Biophysics book series (NAPSB)

Abstract

Microwave enhanced chemical vapor deposition (MWCVD) was used to prepare nanodiamond (ND) films with different process parameters containing silicon-vacancy (SiV) centers. The effect of the local environment on the spectral parameters of SiV center’s zero phonon line emission, like peak position and full width at half maximum (FWHM), being important for many applications, have been studied in films having different morphological and structural properties. Relationships between the residual internal stress of the nanodiamond films and the emission parameters of the SiV centers were found and explained by shifting of the electronic levels of ground and excited states of individual SiV centers within the probed SiV ensembles due to the internal stress.

Keywords

Silicon-vacancy center Nanodiamond Spectral parameters of ZPL Photoluminescence 

Notes

Acknowledgments

This work was supported by the National Research, Development and Innovation Fund of Hungary with the NVKP_16-1-2016-0043 grant and the VEKOP-2.3.2-16-2016-00011 grant and by the Hungarian Science Foundation under contract number OTKA K-115805 “Complex plasmas in Action”.

References

  1. 1.
    Aharonovich I et al (2011) Diamond-based single-photon emitters. Rep Prog Phys 74:076501CrossRefADSGoogle Scholar
  2. 2.
    Fu CC et al (2007) Characterization and application of single fluorescent nanodiamonds as cellular biomarkers. Natl Acad Sci 104:727–732CrossRefADSGoogle Scholar
  3. 3.
    Aharonovich I, Greentree AD, Prawer S et al (2011) Diamond photonic. Nat Photonics 5:397–405CrossRefADSGoogle Scholar
  4. 4.
    Clark CD et al (1995) Silicon defects in diamond. Phys Rev B 51(23):16681–16688CrossRefADSGoogle Scholar
  5. 5.
    Rogers LJ et al (2014) Electronic structure of the negatively charged silicon-vacancy center in diamond. Phys Rev B 89(23):235101CrossRefADSGoogle Scholar
  6. 6.
    Zaitsev AM (2001) Optical properties of diamond. Springer, Berlin/New YorkCrossRefGoogle Scholar
  7. 7.
    May PW et al (2007) Microcrystalline, nanocrystalline, and ultrananocrystalline diamond chemical vapor deposition: experiment and modeling of the factors controlling growth rate, nucleation, and crystal size. J Appl Phys 101(5):053115CrossRefADSGoogle Scholar
  8. 8.
    Larson JM et al (2003) The effect of substrate temperature on the morphology of diamond films grown under acetylene-lean and acetylene-rich conditions. Diam Relat Mater 12(9):1584–1593CrossRefADSGoogle Scholar
  9. 9.
    Sternschulte H et al (1995) Uniaxial stress and Zeeman splitting of the 1.681 eV optical center in a homoepitaxial CVD diamond film. Diam Relat Mater 4(10):1189–1192CrossRefADSGoogle Scholar
  10. 10.
    Jahnke KD et al (2015) Electron–phonon processes of the silicon-vacancy centre in diamond. New J Phys 17(4):043011CrossRefGoogle Scholar
  11. 11.
    Neu E et al (2011) Single photon emission from silicon-vacancy colour centres in chemical vapour deposition nano-diamonds on iridium. New J Phys 13(2):025012CrossRefGoogle Scholar
  12. 12.
    Himics L et al (2016) Spectral properties of the zero-phonon line from ensemble of silicon–vacancy center in nanodiamond. Opt Quant Electron 48(8):394CrossRefGoogle Scholar
  13. 13.
    Goss JP et al (1996) The twelve-line 1.682 eV luminescence center in diamond and the vacancy-silicon complex. Phys Rev Lett 77(14):3041CrossRefADSGoogle Scholar
  14. 14.
    Hepp C et al (2014) Electronic structure of the silicon vacancy color center in diamond. Phys Rev Lett 112(3):036405CrossRefADSGoogle Scholar

Copyright information

© Springer Science+Business Media B.V., part of Springer Nature 2018

Authors and Affiliations

  • L. Himics
    • 1
  • M. Veres
    • 1
  • S. Tóth
    • 1
  • I. Rigó
    • 1
  • M. Koós
    • 1
  1. 1.Wigner Research Centre for Physics, Hungarian Academy of SciencesBudapestHungary

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