Residual Stress in Si3N4 and SiC after Grinding and Cooling from High Temperature
Residual stresses have been measured on Si3N4 and SiC specimens which have been 4pt-bend tested earlier in a project sponsored by International Energy Agency. Large scatter in surface residual stress was found and show no correlation with bend strength. Heat treatment between 700 °C and 1200 °C followed by water quenching creates large compressive stresses in the surface. Air cooling gave marked relaxation after treatment in the high temperature range.
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