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Residual Stress in Si3N4 and SiC after Grinding and Cooling from High Temperature

  • M. Odén
  • T. Ericsson
Chapter

Abstract

Residual stresses have been measured on Si3N4 and SiC specimens which have been 4pt-bend tested earlier in a project sponsored by International Energy Agency. Large scatter in surface residual stress was found and show no correlation with bend strength. Heat treatment between 700 °C and 1200 °C followed by water quenching creates large compressive stresses in the surface. Air cooling gave marked relaxation after treatment in the high temperature range.

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References

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Copyright information

© Elsevier Science Publishers Ltd and MPA Stuttgart 1992

Authors and Affiliations

  • M. Odén
    • 1
  • T. Ericsson
    • 1
  1. 1.Department of Mechanical Engineering, Division of Engineering MaterialsLinköping UniversityLinköpingSweden

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